Lumigntech Co., Ltd.

Hae Yong Lee

Young Jun Choi

Hyun Hee Hwang

Jung Gyu Kim

Hyun Soo Jang

Hea Kon Oh

Jin Hun Kim

Hae Gon Oh

The present invention relates to a GaOcrystal film deposition method according to HVPE, a deposition apparatus, and a GaOcrystal film-deposited substrate using the same. According to an embodiment of the present invention, a GaOcrystal film deposition method, which includes a first step of supplying GaCl gas onto a single-crystal semiconductor substrate via a central supply channel and a second step of supplying oxygen and HCl gas onto the single-crystal semiconductor substrate onto which the GaCl gas is supplied, is provided.

Method of depositing GaOcrystal film according to hydride vapor phase epitaxy by supplying GaCl gas, oxygen, and HCl gas

The present invention is directed to a method of manufacturing a substrate, which includes loading a base substrate into a reaction furnace; forming a buffer layer on the base substrate; forming a separation layer on the buffer layer; forming a semiconductor layer on the separation layer at least two; and separating the semiconductor layer from the base substrate via the separation layer through natural cooling by unloading the base substrate from the reaction furnace.

Method of manufacturing substrate

Provided is a semiconductor substrate and a method for manufacturing the same. The semiconductor substrate includes a substrate, a discontinuously formed hemispheric metal layer on the substrate, and a semiconductor layer on the hemispheric metal layer. A plurality of voids on the interface of the substrate and discontinuous hemisphere are formed to absorb or relax the stain of interface. Accordingly, even if a subsequent layer is relatively thickly formed on the substrate, substrate bow or warpage can be minimized.

Semiconductor substrate and method for manufacturing the same

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Yongin-si, South Korea

Hae Yong Lee