Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Hae Yeol Kim

Binn Kim

Han Sang Lee

Sung Ki Kim

Juhn Suk Yoo

Hyun Sik Seo

Yong Ho Jang

Soo Young Yoon

Min Doo Chun

Seung Chan Choi

Hyung Nyuck Cho

Yong Jin Cho

Kwang Jo Hwang

Tae Woong Moon

Dae Hyun Nam

Jong Uk Bae

The present invention relates a liquid crystal display device which can minimize resistance of a common line. The liquid crystal display device includes a plurality of data lines and a plurality of common lines arranged alternately, a plurality of gate lines arranged to cross the data lines and the common lines, a pixel electrode formed at every pixel region defined as a region is surrounded by the data line, the common line and the gate line, and at least one auxiliary electrode unit overlapped with a portion of each of the pixel electrodes adjacent to the common line, wherein the auxiliary electrode unit is connected to the common electrode line electrically.

Liquid crystal display device

An electro-luminescence display device includes an electro-luminescence panel having a plurality of pixels at pixel areas defined by intersections between data lines and gate lines, each of the pixels including: an electro-luminescence cell connected to receive a supply voltage, a driving thin film transistor controlling a current amount flowing through the electro-luminescence cell, and a bias switch connected to a gate terminal of the driving thin film transistor, the bias switch selectively applying an inverse voltage to the driving thin film transistor.

Electro-luminescence display device and driving method thereof

The present invention relates to an electro-luminescence display and a driving method thereof wherein a thin film transistor is prevented from the deterioration, to thereby improve a picture quality. An electro-luminescence (EL) display, including: a plurality of drive voltage supply lines; N compensation voltage supply lines; EL cells at each crossing of a plurality of data lines and a plurality of gate lines in a matrix, wherein the EL cells emit light in response to currents applied from the drive voltage supply lines; driving thin film transistors (TFT) connected between the EL cells and compensation voltage supply lines that control the current applied to the EL cells; and a bias switch, connected between the N&#x2212;1th compensation voltage supply line and a control terminal of the driving TFT connected to the Nth compensation voltage supply line that applies a bias voltage to the driving TFT when a scan pulse is supplied to the N&#x2212;1th gate line.

Electro-luminescence display device and driving apparatus thereof

A shift register includes first and second stages for sequentially outputting scan pulses to drive first and second gate lines. One of the first and second stages includes a pull-up switching device connected to an enabling node of the one of the first and second stages; a first pull-down switching device connected to a first disabling node of the one of the first and second stages; a second pull-down switching device connected to a second disabling node of the one of the first and second stages; and a node controller. The node controller of the first stage controls the logic state of each of the enabling node of the first stage, the first disabling node of the first stage and the first disabling node of the second stage. The node controller of the second stage controls the logic state of each of the enabling node of the second stage, the second disabling node of the second stage and the second disabling node of the first stage.

Shift register

The present invention relates to a liquid crystal display panel and a fabricating method thereof that is capable of enhancing crystallization efficiency of an active layer and simplifying the fabricating process. A fabricating method of a liquid crystal display panel includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode formed thereon; forming an amorphous silicon film on the gate insulating film; forming an insulating pattern on the amorphous silicon film; crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal, the polycrystalline silicon film having source, drain and channel areas, wherein the insulating pattern overlaps the channel area of the polycrystalline silicon film; and forming source and drain electrodes on the polycrystalline silicon film, wherein the source and the drain electrodes contacting the source and drain areas of the polycrystalline silicon film, respectively.

Liquid crystal display panel and method of fabricating thereof

A method for fabricating a liquid crystal display includes providing a first substrate having a pixel part and a driving circuit part, forming a gate electrode in the pixel part of the first substrate, forming a first insulation film, a first amorphous silicon thin film and a second amorphous silicon thin film on the first substrate, forming a first conductive film on the first substrate, having the first insulation film, the first amorphous silicon thin film, and the second amorphous silicon thin film, selectively patterning the first conductive film, the second amorphous silicon thin film and the first amorphous silicon thin film to form an active pattern in each of the pixel part and the driving circuit part of the first substrate and source and drain electrodes, crystallizing the first amorphous silicon thin film constituting the active pattern of the driving circuit part, forming a second insulation film on the first substrate, forming a pixel electrode in the pixel part and a gate electrode in the driving circuit part, and attaching the first substrate to a second substrate.

Liquid crystal display device and fabrication method thereof

LCD with metal diffused into the insulating layer over the channel area

A method of forming polycrystalline silicon for a liquid crystal display device is disclosed in the present invention. The method includes forming an amorphous silicon layer on a substrate, forming a plurality of catalytic metal clusters on the amorphous silicon layer, forming a catalytic metal gettering layer adjacent to the amorphous silicon layer, and heat-treating the substrate including the amorphous silicon layer to transform the amorphous silicon layer into a polycrystalline silicon layer, wherein unreacted catalytic metal clusters migrate to the catalytic metal gettering layer in a direction perpendicular to the substrate.

Method of forming polycrystalline silicon for liquid crystal display device

A method for fabricating a thin film transistor includes forming a buffer layer on a substrate, forming a first amorphous silicon layer on the buffer layer, forming a plurality of metal clusters on the first amorphous silicon layer, forming a second amorphous silicon layer on the metal clusters including the first amorphous silicon layer, and simultaneously applying a heat-treatment and an electrical field to crystallize the first and the second amorphous silicon layers.

Growing community of inventors

Gyeonggi-do, South Korea

Hae Yeol Kim