Postech Academy-industry Foundation

Skhynix Inc.

Hae Wook Han

Young Woong Do

Won Jun Lee

Su Hwan Lim

Kyoung In Lee

Ki Won Moon

Do Hwan Kim

Sang Dong Yoo

Cha Young Lee

An image sensor may include: a photoelectric conversion layer suitable for converting light into an electrical signal; a spacer layer formed over the photoelectric conversion layer, and suitable for preventing light reflection while adjusting a focus; and a first condensing layer formed at the inner bottom of the spacer layer, and suitable for condensing incident light.

Image sensor with inner light-condensing scheme

An image sensor includes a color filter configured to pass a specific color of light; a micro lens formed under the color filter and configured with a plurality of layers in which an upper layer has a smaller area than a lower layer; and a photo device formed under the micro lens and configured to receive light passing through the micro lens and convert the received light into an electrical signal.

Image sensor with micro lens including a plurality of layers each of different thickness

The present invention is provided to remove scattering from other parts, except for an end part of a nano-probe, in a near-field microscope, and to enable a spectral analysis by delaying the generation of multiple reflections caused through the shaft of the nano-probe. A first characteristic of the present invention is to temporally delay generation of multiple reflections by manufacturing a probe portion to have a predetermined length or more in a tuning-fork based near-field probe. A second characteristic of the present invention is to provide a near-field microscope which includes a tuning-fork based near-field probe having a structure as above, and can measure a time-domain transient reaction of a scattered wave. A third characteristic of the present invention is to provide a method for performing a spectral analysis on a time-domain signal measured by the near-field microscope.

Tuning-fork based near field probe for spectral measurement, near-field microscope using the same, and spectral analysis method using near-field microscope

A CMOS image sensor includes an active pixel structure suitable for sensing light incident from outside and converting a sensed light into an electrical signal, and an optical block structure suitable for blocking a visible light and passing a UV light to check and evaluate an electrical characteristic of the active pixel area. The UV pass filter includes first and second insulation layers comprising an insulator, and a metal layer formed between the first and second insulation layers.

Growing community of inventors

Gyeongsangbuk-do, South Korea

Hae Wook Han