Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Hae Wan Yang

Sheng Fen Chiu

Guan Hua Li

Chao Zhou

Hong Wei Zhang

Yong Huang

Qian Zhou

A fan-out structure and its manufacturing method are presented, relating to semiconductor techniques. The fan-out structure includes a welding pad; a welding pad extension member contacting the welding pad; and a fan-out line contacting the welding pad extension member, with an elicitation direction of the fan-out line perpendicular to an extension direction of the welding pad. This fan-out structure allows the fan-out line to be horizontally or vertically elicited from the welding pad, and thus remedies the drawbacks associated with an aslant-elicited fan-out line in conventional fan-out structures.

Fan-out structure and manufacture thereof

A method is provided for fabricating a semiconductor memory device. The method includes providing a substrate and forming a stacked layer on the substrate, where the stacked layer includes a tunneling dielectric layer and a floating gate layer sequentially formed on the substrate. The method also includes forming a plurality of stacked structures by etching the stacked layer and the substrate, where the spacing between the adjacent stacked structures forms a plurality of parallel first trenches. In addition, the method includes forming a plurality of second trenches and forming a plurality of third trenches. Moreover, the method includes forming a second dielectric layer on the floating gate layer and the side wall and bottom of the third trenches and forming a control gate layer on the second dielectric layer. Further, the method includes forming a plurality of fourth trenches and removing the sacrificial layer along the fourth trenches.

Semiconductor memory device

Semiconductor memory device and fabrication method thereof

Growing community of inventors

Shanghai, China

Hae Wan Yang