Db Hitek Co., Ltd.

Hae Taek Kim

Jin Hyo Jung

Ja Geon Koo

Hyun Joong Lee

Sang Yong Lee

Ki Won Lim

Seung Hyun Eom

Kee Joon Choi

Sang Gi Lee

Bum Seok Kim

Mi Hye Jun

Duk Joo Woo

Bon Sug Koo

Jung Ah Kim

Provided is an RF switch device and a method of manufacturing the same and, more particularly, to an RF switch device that improves the on-resistance (Ron) of the RF switch by including an integral or integrally formed P diode. The RF switch device includes a first active region on a first substrate as a first base, a second active region on the first substrate spaced apart from the first active region as a second base, and a gate electrode on the first active region and on the second active region.

RF switch device

An RF switch device in a stacked configuration and a method of manufacturing the same seek to reduce or eliminate a voltage imbalance, a condition in which different voltages are applied to different stages of the RF switch device, by forming air gaps on or over corresponding gate electrodes, in which each of the air gaps in a single stage has a different width.

RF switch device including multi-width air gaps

Disclosed is an RF switch device and, more particularly, an RF switch device having an air gap over a gate electrode and a metal interconnect at a position higher than the air gap and that at least partially overlap the air gap in the vertical direction, thereby preventing exposure of an upper portion of the air gap in subsequent processing.

A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.

Semiconductor device formed on SOI substrate

A voltage generator configured to generate a plurality of voltage groups, each of the plurality of voltage groups including a plurality of reference voltages, and a decoder having an output node configured to output one of the plurality of reference voltages is disclosed. The decoder includes switch blocks that correspond to the plurality of voltage groups. Each of the switch blocks includes transistors that are turned on or off by or in response to a control signal, and each transistor in one of the switch blocks has a channel width different from a channel width of each transistor in another one of the switch blocks.

Digital-to-analog converter, data driver and display apparatus including the same

A high voltage semiconductor device includes a gate electrode structure disposed on a substrate, a source region disposed in the substrate to be adjacent to one side of the gate electrode structure, a first drift region disposed in the substrate to be adjacent to another side of the gate electrode structure, a drain region electrically connected with the first drift region, and a device isolation region disposed on one side of the drain region. Particularly, the first drift region is spaced apart from the device isolation region.

Growing community of inventors

Gyeonggi-do, South Korea

Hae Taek Kim