Industry-University Cooperation Foundation Hanyang University

Sinmisa Co., Ltd

Samsung Electronics Co., Ltd.

Hae Soo Park

Jin Pyo Hong

Seung Mo Yang

Jun Beom Kim

Jun Sik Yoon

Shoe

A three-axis magnetic sensor which is not physically separated from each other and made of one element is provided. A spin-orbit torque is generated through an interface junction between a magnetization seed layer and a magnetization free layer, and through this, a change in an in-plane magnetic field may be sensed in the form of current or voltage in the magnetization seed layer. Further, a tunneling insulating layer and a magnetization pinned layer are formed on the magnetization free layer. The formed structure induces a tunnel magneto-resistance phenomenon. Through this, a change in a magnetic field in a vertical direction is sensed.

Three-axis magnetic sensor having perpendicular magnetic anisotropy and in-plane magnetic anisotropy

A structure and operation method of a spin device using a magnetic domain wall movement by spin orbit torque are provided. It is possible to invert the magnetization of free layer of the device at a low value of current by using the spin orbital torque, and the structure of the device is simpler than that of the conventional CMOS. Further, a spin synapse device to which a free layer of multiaxial anisotropy is applied in addition to movement of a magnetic domain wall is provided. Since the magnetoresistance can be adjusted according to the angle of the pinned layer and the free layer, it is easy to apply multi-bit and it can be applied to artificial synapse technology.

Spin device, and operating method therefor and manufacturing method therefor

Growing community of inventors

Seoul, South Korea

Hae Soo Park