Samsung Electronics Co., Ltd.

Hae Soo Ha

Jae Yoon Kim

Jae Ho Han

Tae Hun Kim

Sung Tae Kim

Ki Seok Kim

Jin Young Choi

Seok Min Hwang

Myeong Ha Kim

Wan Ho Lee

A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.

Semiconductor light emitting device

A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

A semiconductor light emitting device includes a substrate, a plurality of light emitting cells, a connection part, and a concavo-convex part. The light emitting cells are arrayed on the top surface of the substrate. Each of the light emitting cells has a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer that are sequentially stacked on the top surface of the substrate. The connection part is formed to connect the light emitting cells in series, parallel or series-parallel. The concavo-convex part is formed in at least one of the bottom surface of the substrate and the top surface of an isolation region between the light emitting cells.

Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus

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Suwon-si, South Korea

Hae Soo Ha