Skhynix Inc.

Hae-Jung Park

Tae-Hang Ahn

Oh-Hyun Kim

Sung-Hwan Ahn

Dae-Sik Park

Se-Han Kwon

Chang-Youn Hwang

Jung-Taik Cheong

Yun-Je Choi

Sang-Kil Kang

Ill-Hee Joe

Tae-Woo Jung

A method for fabricating a semiconductor device includes: preparing a substrate; forming an isolation layer defining an active region in the substrate; forming a first insulation structure over the substrate, the first insulation structure defining a line-type opening that exposes the isolation layer and the active region; forming a plug pad through a Selective Epitaxial Growth (SEG) process over the exposed active regions; forming a second insulation structure inside the line-type opening, the second insulation structure defining a contact hole landing on the plug pad; and filling the contact hole with a contact plug.

Semiconductor device and method for fabricating the same

A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Semiconductor device with air gap and method for fabricating the same

A method includes: forming a first contact hole by etching a first inter-layer dielectric layer; forming a preliminary first conductive plug that fills the first contact hole; forming a bit line structure over the preliminary first conductive plug; forming a first conductive plug by etching the preliminary first conductive plug so that a gap is formed between a sidewall of the first contact hole and the first conductive plug; forming an insulating plug in the gap; forming a multi-layer spacer including a sacrificial spacer; forming a second conductive plug neighboring the bit line structures and the first conductive plugs with the multi-layer spacer and the insulating plug therebetween; and forming a line-type air gap within the multi-layer spacer by removing the sacrificial spacer.

Semiconductor memory device with selectively located air gaps

Semiconductor device with line-type air gaps and method for fabricating the same

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Gyeonggi-do, South Korea

Hae-Jung Park