Skhynix Inc.

Hae Jung Lee

Myoung Soo Kim

Eun Mi Kim

Byung Soo Park

Sung Yoon Cho

Sang Do Lee

Sang Kil Kang

A non-volatile memory device according to an aspect of the present disclosure includes a substrate, a plurality of word lines stacked over the substrate and having a stepwise pattern, wherein the plurality of word lines each have a pad region, and a plurality of contact plugs coupled to the respective pad regions of the word lines, wherein a width of a pad region of a first one of the plurality of word lines is greater than a width of a pad region of a second word line lower than the first word line.

3-D structured non-volatile memory device and method of manufacturing the same

A semiconductor device includes a substrate and a plurality of active pillars disposed on the substrate and spaced apart from each other by trenches. Each of the active pillars includes a buried metal silicide pattern and an active region stacked on the buried metal silicide pattern, and the active region includes impurity junction regions.

Semiconductor devices having buried metal silicide layers and methods of fabricating the same

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Seoul, South Korea

Hae Jung Lee