Rohm and Haas Electronic Materials Korea Ltd.

Hae-Jin Lim

Chang-Young Hong

Dong-Yong Kim

Min-Kyung Jang

Myung Yeol Kim

Jung-June Lee

Hyun Bae Jeon

Eui-Hyun Ryu

Eui Hyun Ryu

Jae Yun Ahn

Dong-Je Hong

Yoo Jung Yoon

Dong Je Hong

Ohk-Min Jeon

Philjae Kang

Won Seok Lee

Kwang Mo Choi

Disclosed herein is a photoresist composition comprising a first polymer comprising an acid labile group; a photoacid generator; and an acid diffusion control agent that comprises a tri-alkyl amide compound having a lipophilicity (log P) value that is greater than 11.

Photoresist composition comprising amide compound and pattern formation methods using the same

New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Photoresist compositions and methods

New photobase generators suitable for use in photoresists are provided that correspond to Formula (I):X&#x2014;R&#x2014;O&#x2014;C(&#x2550;O)N(R)R&#x2003;&#x2003;(I)wherein Xis an optionally substituted aromatic group; Ris a linker; and Rand Rare the same or different optionally substituted linear, branched or cyclic aliphatic group or an optionally substituted aromatic group, wherein at least one of Rand Ris an optionally substituted branched alkyl group having 4 or more carbon atoms.

Photobase generators and photoresist compositions comprising same

Growing community of inventors

Yonsu-Gu, South Korea

Hae-Jin Lim