Samsung Electronics Co., Ltd.

Hae-in Jung

Satoru Yamada

Sung-Hwan Kim

Joon Soo Han

Jun-Hee Lim

Soo-jin Hong

Ki-Jae Hur

Moon-young Jeong

Provided are a multi-direction channel transistor having a gate having an increased effective width and a multi-direction channel, and a semiconductor device including the multi-direction channel transistor, wherein the multi-direction channel transistor includes at least one fin on an active region on a substrate and disposed adjacent to a recess extending in a first direction; a gate line extending in a second direction crossing the first direction and covering at least a portion of the at least one fin and the recess; source/drain regions on the active region at both sides of the gate line; and a channel region in the active region under the gate line between the source/drain regions, wherein the first direction is diagonal to the second direction, and a dielectric film under the gate line has substantially the same thickness on both the at least one fin and the recess.

Multi-direction channel transistor and semiconductor device including the multi-direction channel transistor

In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An ion implantation process is performed at an upper portion of the substrate exposed by the gate structure, so that an ion implantation region is formed to have an expanded volume. The ion implantation process uses ions that are identical to a material of the substrate.

Methods of manufacturing semiconductor devices

Growing community of inventors

Suwon-si, South Korea

Hae-in Jung