Asml Netherlands B.v.

Hadi Yagubizade

Hakki Ergün Cekli

Ahmet Koray Erdamar

Patricius Aloysius Jacobus Tinnemans

Franciscus Godefridus Casper Bijnen

Edo Maria Hulsebos

Ralph Brinkhof

Henricus Johannes Lambertus Megens

Maikel Robert Goosen

Weitian Kou

Willem Seine Christian Roelofs

Xiuhong Wei

Loek Johannes Petrus Verhees

Wendy Johanna Martina Van De Ven

Manouk Rijpstra

Matthijs Cox

Tran Thanh Thuy Vu

Boris Menchtchikov

Daan Maurits Slotboom

Yichen Zhang

Sudharshanan Raghunathan

Maaike Van't Westeinde

Jeonghyun Park

Yingchao Cui

Everhardus Cornelis Mos

Roy Werkman

Jochem Sebastiaan Wildenberg

Hubertus Johannes Gertrudus Simons

Sarathi Roy

Jeroen Cottaar

Mohammad Reza Kamali

Lydia Marianna Vergaij-Huizer

Bijoy Rajasekharan

Pieter Gerardus Jacobus Smorenberg

Robertus Wilhelmus Van Der Heijden

Ronald Van Ittersum

Min-Seok Kim

Sang Uk Kim

Reza Mahmoodi Baram

Maaike Van T Westeinde

Hakki Ergun Cekli

A method for determining lithographic matching performance includes obtaining first monitoring data from recurrent monitoring for stability control for an available EUV scanner. For a DUV scanner, second monitoring data is similarly obtained from recurrent monitoring for stability control. The EUV first monitoring data are in a first layout. The DUV second monitoring data are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing the first and/or second monitoring data into a common layout to allow comparison of the first and second monitoring data.

Determining lithographic matching performance

A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

Method for controlling a lithographic apparatus

A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.

Method for controlling a manufacturing apparatus and associated apparatuses

A method for correcting values of one or more feed-forward parameters used in a process of patterning substrates, the method including: obtaining measured overlay and/or alignment error data of a patterned substrate; and calculating one or more correction values for the one or more feed-forward parameters in dependence on the measured overlay and/or alignment error data.

Method of adapting feed-forward parameters

A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.

Device manufacturing method

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Lithographic method

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

Growing community of inventors

Eindhoven, Netherlands

Hadi Yagubizade