Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Hacile Kaya

Abdelkader Aliane

Jean-Louis Ouvrier-Buffet

Jean-Michel Hartmann

Luc Andre

Zouhir Mehrez

Quentin Durlin

A photodiode including a detection portion having a doped first region, a doped second region and an intermediate region; a dielectric layer; and a semiconductor peripheral portion. It also includes a ferroelectric peripheral portion located between and in contact with the intermediate layer and the dielectric layer, and located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane.

Passivated photodiode comprising a ferroelectric peripheral portion

The invention relates to a planar photodiodeincluding a detection portionmade of a germanium-based material M, and a peripheral lateral portionincluding several materials stacked on top of one another, including a material Mhaving a coefficient of thermal expansion lower than that of the material M, and a material Mhaving a coefficient of thermal expansion higher than or equal to that of the material M. The intermediate regionincludes a portion Psurrounded by the material Mand having tensile stresses. It also includes a portion Psurrounded by the material Mand having compressive stresses. This portion Psurrounds a n doped box

Germanium-based planar photodiode with a compressed lateral peripheral zone

The invention relates to a method for manufacturing at least one passivated planar photodiode, comprising the following steps:

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Grenoble, France

Hacile Kaya