Epcos Ag

Nokia Corporation

Habbo Heinze

Edgar Schmidhammer

Pasi Tikka

Ralph Stömmer

Reiner Welzer

Juha Ellä

Thomas Metzger

Markus Mayer

Christoph Eggs

Andreas Link

Wolfgang Sauer

Ansgar Schäufele

Jürgen Kiwitt

Monika Schmiedgen

Ralph Stoemmer

Herbert Zidek

Juha EllÄ

Ansgar Schaufele

A method of manufacturing a filter circuit including series and parallel coupled BAW resonators is given which compensates for frequency tolerances of the resonators which are due to the manufacturing process. The new method includes measuring a resonance frequency of at least one type of the BAW resonators produced on a wafer and defining a deviation from a desired frequency. A trimming layer is then deposited onto the entire wafer. At last, a thickness portion of the trimming layer is selectively removed, the portion being dependent on a location on the wafer and on the calculated deviation of the resonance frequency at this location.

Process for adapting resonance frequency of a BAW resonator

The invention relates to a filter operating with bulk acoustic waves, comprising at least one first resonator and at least one second resonator. In the at least one first and second resonator, a longitudinal acoustic mode is capable of propagation, for which normal dispersion is adjusted in the first resonator and abnormal dispersion in the second resonator by selection of the material and the relative layer thicknesses. In particular, the power compatibility of the filter at the higher frequency edge of its passband can be improved.

Bulk acoustic wave resonator filter

An arrangement includes a substrate, a filter, a first bulk acoustic wave resonator, a second bulk acoustic wave resonator, and a large surface covering. The first bulk acoustic wave resonator includes a first electrode and a second electrode and is arranged flatly on the substrate. The second bulk acoustic wave resonator includes a first electrode and a second electrode and is arranged flatly on the substrate. The large-surface covering includes a metal layer over the substrate. The metal layer is connected to a ground terminal.

Filter assembly comprising two bulk wave resonators

A resonator operating with bulk acoustic waves includes a resonator stack. The resonator stack includes a resonator area configured to allow propagation of an acoustic main mode and an acoustic secondary mode. The resonator stack also includes an acoustic mirror that includes a first partial mirror for locking in the acoustic main mode in the resonator area and a second partial mirror for locking in the secondary mode in a resonator space.

Resonator functioning with acoustic volume waves

A bulk acoustic wave resonator includes an acoustically active area where an acoustic wave is excitable, and a transition area adjacent to an outside edge of the acoustically active area. A critical frequency of the acoustic wave in the transition area differs from a critical frequency of the acoustic wave in the active area. The transition area includes an additional layer. The bulk acoustic wave resonator includes electrodes for electrically connecting to electrical supply lines. The additional layer is irregular in areas adjacent to junction areas between the electrical supply lines and the resonator.

Bulk acoustic wave resonator and filter

Proposed is a resonator which works with bulk acoustic waves and is based on a layer structure known in the art, which is arranged over a substrate. According to the invention, the total surface of the layer structure, including all resonators contained therein, is covered with a dielectric layer and a metal layer which together form an acoustic mirror, a low-k dielectric being used for the dielectric layer. The total-surface mirror offers broadband functionality over a suitable frequency range. The dielectric contained within the mirror acts as a sealing protective layer for the resonator or resonators.

Resonator and component with hermetic encapsulation

Overlapped electrodes of an electrical component are dimensioned in such a way that when there is translational displacement of one electrode in relation to the electrode situated opposite, their area of overlap remains within a manufacturing tolerance &#x3b2;/2, and also remains constant within the tolerance limits when there is a simultaneous rotation of the electrodes with respect to one another. This is achieved in that the intersecting edge pairs of the overlapping electrodes are designed parallel to one another, whereby the length, measured in the direction parallel to the respective edge pair, of the corresponding electrode everywhere exceeds by &#x3b2; the corresponding length of the area of overlap.

Electrical component having overlapping electrodes, and method for the manufacture of same

A method for improving heat dissipation in an encapsulated electronic package usually referred to as a chip-size SAW package. The package comprises one or more acoustic-wave components fabricated on a die, which is disposed on an electrically non-conductive carrier separated by electrically conducting bumps. The top of the package is covered by a laminate and a hermetic seal layer. Heat dissipation can be improved by removing a part of the laminate and then depositing a layer of thermal conducting material on the package, and by providing one or more heat conducting paths through the carrier.

Encapsulated electronics device with improved heat dissipation

A component working with acoustic bulk waves is provided that has a multi-layer substrate, where the multi-layer substrate comprises an integrated matching network and further circuit elements for adapting the electrical filter properties and can serve as carrier substrate for thin-film resonators.

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Unterschleissheim, Germany

Habbo Heinze