Skhynix Inc.

Ha Neul Yoo

Yun Hui Yang

An image sensing device includes a semiconductor substrate, a material layer, a lens layer, and a lens capping layer. The semiconductor substrate includes a pixel region, which include a plurality of unit pixels, and a pixel-array peripheral region located outside of and peripheral to the pixel region. The material layer is disposed over the semiconductor substrate in the pixel region and the pixel-array peripheral region, and includes a first trench extending to a predetermined depth in the pixel-array peripheral region. The lens layer is disposed over the material layer in the pixel region and collects incident light into a unit pixel in the pixel region. The lens capping layer is disposed over the lens layer and the material layer and includes an edge region formed to fill the first trench.

Growing community of inventors

Icheon-si, South Korea

Ha Neul Yoo