Samsung Electronics Co., Ltd.

Ha Kyu Seong

Tae Jin Park

Jong Min Lee

Seok Hoon Kim

Jae Young Park

Sun Young Lee

Dong Chan Suh

Jin Bum Kim

Dong Suk Shin

Jeong Ho Yoo

Han Mei Choi

Hwa Jin Jang

A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a channel pattern on a substrate, the channel pattern extending in a first direction; a gate pattern on the substrate, the gate pattern extending in a second direction crossing the first direction and surrounding the channel pattern; and an interface layer between the channel pattern and the gate pattern, the interface layer being formed on at least one surface of an upper surface and a lower surface of the channel pattern.

Semiconductor device including channel pattern and manufacturing method thereof

A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.

Method of fabricating semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Ha Kyu Seong