Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Ha Il Kwon

Eun Joo Jang

Shin Ae Jun

Dae Young Chung

Nayoun Won

Tae Gon Kim

Shang Hyeun Park

Jooyeon Ahn

Takahiro Fujiyama

Fumiaki Kato

Masashi Tsuji

Tae Ho Kim

Yusaku Konishi

Naotoshi Suganuma

Soonmin Cha

Yuho Won

Hyun A Kang

Jongmin Lee

Jaejun Chang

Jeong Hee Lee

Deukseok Chung

Garam Park

Won Sik Yoon

Bumjin Lee

Yong Seok Han

Hyeyeon Yang

Misun Kim

Norihito Ishii

Tae Won Jeong

Jinsuop Youn

Tomoyuki Kikuchi

Hyunjoo Han

Hyo Sook Jang

Taehyung Kim

Sang Jin Lee

Oul Cho

Ju Hyun Kim

Kwang Hee Kim

Sujin Park

Moo Ho Lee

Takao Motoyama

Keigo Furuta

Su Jin Park

In-ki Kim

Seung Joon Hwang

Eun Ha Park

A copolymer including a structural unit represented by Chemical Formula 1 wherein the copolymer is capable of improving luminous efficiency and durability, particularly, an improvement in luminescence life-span, of an electroluminescence device, particularly a quantum dot electroluminescence device.

Copolymer, electroluminescence device material including copolymer, and electroluminescence device

Disclosed is a copolymer including a structural unit represented by Chemical Formula 1 capable of improving performance (particularly durability) of an electroluminescent device.

Copolymer, electroluminescent device material including copolymer, and electroluminescent device

A quantum dot device including an anode and a cathode, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots, a first hole auxiliary layer disposed on the anode, the first hole auxiliary layer including poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate or a derivative thereof (PEDOT:PSS), a second hole auxiliary layer disposed on the first hole auxiliary layer and including a hole transport material different from the PEDOT:PSS, wherein the light emitting layer is disposed on the second hole auxiliary layer, wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and the second surface includes a surface modification region including a surface modification material having a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof. An electronic device that includes the quantum dot device.

Quantum dot device and electronic device

A copolymer, including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof: wherein R, R, R, X, X, and Arare as provided herein.

A quantum dot including a semiconductor nanocrystal core including indium (In) and phosphorus (P) and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell including zinc (Zn) and selenium (Se), wherein the semiconductor nanocrystal shell is doped with a dopant metal having a larger ion radius than a radius of an Znion, the quantum dot does not include cadmium, and the quantum dot has a quantum efficiency of greater than or equal to about 70% and a full width at half maximum (FWHM) of an emission peak of less than or equal to about 40 nanometers (nm), and an electroluminescent device including the same.

Core-shell quantum dots having high quantum efficiency, and an electronic device including the same

A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.

Compositions, quantum dot polymer composites prepared therefrom, and devices including the same

A copolymer having a structural unit represented by Chemical Formula 1 is provided. The copolymer may improve performance, e.g., luminous efficiency, of an electroluminescence device. In Chemical Formula 1, the definition of each substituent is as described in the detailed description.

A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

Quantum dot-polymer composite film, method of manufacturing the same, and device including the same

A photosensitive resin composition includes (A) a photo-conversion material; (B) a metal-containing compound; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, wherein the metal-containing compound includes a *&#x2014;S-M-S&#x2014;* (M is Zn, Al, Mg, Ca, Sc, Ti, 5 V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure, a complex including a polymer matrix in which a photo-conversion material is dispersed, wherein the polymer matrix includes a *&#x2014;S-M-S&#x2014;* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure and an ester linking group, a laminated structure including the complex, and a display device and an electronic device including the laminated structure.

Photosensitive resin composition, complex, laminated structure and display device, and electronic device including the same

A quantum dot including a first ligand and a second ligand on a surface of the quantum dot, a composition or composite including the same, and a device including the same. The first ligand includes a compound represented by Chemical Formula 1 and the second ligand includes a compound represented by Chemical Formula 2:MA&#x2003;&#x2003;Chemical Formula 1 

Quantum dots, a composition or composite including the same, and an electronic device including the same

A quantum dot device including an anode and a cathode facing each other, a quantum dot layer disposed between the anode and the cathode, and an electron transport layer disposed between the cathode and the quantum dot layer, wherein the quantum dot layer includes an emissive quantum dot emitting light in at least one part of a wavelength region in a visible region and a non-emissive quantum dot configured to not emit light in a visible region, and a difference between a lowest unoccupied molecular orbital (LUMO) energy level of the non-emissive quantum dot and a LUMO energy level of the electron transport layer is greater than or equal to about 0.5 electronvolts (eV).

Quantum dot device and electronic device comprising an emissive quantum dot and a non-emissive quantum dot

An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m).

Electronic device including quantum dots

Growing community of inventors

Suwon-si, South Korea

Ha Il Kwon