United Microelectronics Corp.

United Integrated Circuits Corp.

H T Yang

Hsueh-Hao Shih

Kuen-Chu Chen

Yu-Shan Tai

A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about6-126-20times of the volume of the additional moisture. The method according to the invention improves the electrical quality of the gate oxide by raising the Qand by reducing the leakage current of the gate oxide.

Method for fabricating gate oxide

A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about 6-12 times of the volume of the additional moisture. The method according to the invention improves the electrical quality of the gate oxide by raising the Q.sub.bd and by reducing the leakage current of the gate oxide.

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Hsinchu, Taiwan

H T Yang