Leland Stanford Junior University

Samsung Electronics Co., Ltd.

H-s Philip Wong

Chung Chun Wan

Seunghyun Lee

Kenneth E Goodson

Yongsung Kim

Nishant P Patil

Subhasish Mitra

Mehdi Asheghi

Eric Pop

Chiyui Ahn

Aditya Sood

Scott Fong

Christopher M Neumann

A wafer-scale multiple carbon nanotube transfer process is provided. According to one embodiment of the invention, plasma exposure processes are performed at various stages of the fabrication process of a carbon nanotube device or article to improve feasibility and yield for successive transfers of nanotubes. In one such carbon nanotube transfer process, a carrier material is partially etched by a plasma process before removing the carrier material through, for example, a wet etch. By applying the subject plasma exposure processes, fabrication of ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics is facilitated. The ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics fabricated utilizing embodiments of the invention can be used, for example, to make high-performance carbon nanotube field effect transistors (CNFETs) and low cost, highly-transparent, and low-resistivity electrodes for solar cell and flat panel display applications. Further, three-dimensional CNFETs can be provided by utilizing the subject plasma exposure processes.

Multiple carbon nanotube transfer and its applications for making high-performance carbon nanotube field-effect transistor (CNFET), transparent electrodes, and three-dimensional integration of CNFETs

Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.

Graphene-inserted phase change memory device and method of fabricating the same

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Palo Alto, CA, United States of America

H-s Philip Wong