Leland Stanford Junior University

University of California

H S Philip Wong

Arash Hazeghi

Zhenan Bao

Yi Cui

Ali Javey

Hailin Peng

Darren J Lipomi

Chee-Keong Tee

Kuniharu Takei

David J K Goldhaber

Yang Chai

Michael V McConnell

Yuan Zhang

Joseph A Sulpizio

Stefan Meister

Lisa Yun Chen

SangBum Kim

Aspects of the present disclosure are directed to pressure sensing. As may be implemented in accordance with one or more embodiments, an external energy field is applied to a resonant circuit having inductive conductors separated by a compressible dielectric, for wirelessly detecting pressure. Specifically, the resonant circuit is responsive to the energy field and applied pressures by operating in respective states exhibiting different resonant frequencies that are based upon pressure-related compression of the compressible dielectric. These resonant frequencies, or a change in the resonant frequencies, can be used as an indication of the pressure.

Passive and wireless pressure sensor

A method of conductively coupling a carbon nanostructure and a metal electrode is provided that includes disposing a carbon nanostructure on a substrate, depositing a carbon-containing layer on the carbon nanostructure, according to one embodiment, and depositing a metal electrode on the carbon-containing layer. Further provided is a conductively coupled carbon nanostructure device that includes a carbon nanostructure disposed on a substrate, a carbon-containing layer disposed on the carbon nanostructure and a metal electrode disposed on the carbon-containing layer, where a low resistance coupling between the carbon nanostructure and metal elements is provided.

Methods of establishing low-resistance electrical contact to carbon nanostructures with graphitic interfacial layer

The present approach is based on the use of an integrated capacitance bridge circuit to measure the capacitance of a device under test. A significant feature of this approach is that the operating point is not the null point of the bridge circuit. Instead, the operating point of the bridge circuit is tuned to be away from the null point. By moving away from the null point, the output signal from the bridge circuit is increased. Preferably, this output signal is substantially larger than the input noise floor of an amplifier connected to the bridge circuit output, while being substantially less than G&#x3bd;, where G is the gain provided by the bridge circuit transistor and &#x3bd;is the AC signal applied to the device under test. Experiments on graphene devices and on carbon nanotube FETs demonstrate about 10 aF resolution (graphene) and about 13 aF resolution (carbon nanotube FET) at room temperature.

Integrated capacitance bridge for high-resolution wide-temperature-range capacitance measurement

Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depositing nanoparticles at locations on a substrate. Chalcogenide-based nanowires are created at the locations on the substrate using a vapor-liquid-solid technique. Insulating material is deposited between the chalcogenide-based nanowires. Lines are created to connect at least some of the chalcogenide-based nanowires.

Method and system for chalcogenide-based nanowire memory

Growing community of inventors

Stanford, CA, United States of America

H S Philip Wong