Micron Technology Incorporated

Nantero, Inc.

Round Rock Research, LLC

H Montgomery Manning

Thomas Rueckes

Gurtej S Sandhu

Cem Basceri

Claude Louis Bertin

Kunal R Parekh

David H Wells

Thomas M Graettinger

Rahul Sen

Mark Fischer

Eliodor G Ghenciu

Garo Jacques Derderian

Karl M Robinson

Ken W Marr

Marsela Pontoh

David A Roberts

Thomas R Bengtson

Michel Pires Monteiro

Hao-Yu Lin

Stephen W Russell

Todd R Abbott

C Rinn Cleavelin

James Mathew

T Earl Allen

Howard Kirsch

Stephen J Kramer

Jonathan Wesley Ward

X M Henry Huang

Charles H Dennison

Brent M Segal

Feng Gu

Darlene Hamilton

A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. Control circuitry is provided in electrical communication with and for applying electrical stimulus to the conductive terminal and to at least a portion of the nanoscopic element stack. At least one of the nanoscopic elements is capable of switching among a plurality of electronic states in response to a corresponding electrical stimuli applied by the control circuitry to the conductive terminal and the portion of the nanoscopic element stack. For each electronic state, the nanoscopic element stack provides an electrical pathway of corresponding resistance.

Nonvolatile nanotube switches with reduced switching voltages and currents

A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.

Microfluidic control surfaces using ordered nanotube fabrics

Nonvolatile nanotube switches and systems using same

Methods for arranging nanoscopic elements within networks, fabrics and films

Methods for passivating a nanotube fabric layer within a nanotube switching device to prevent or otherwise limit the encroachment of an adjacent material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous nanotube fabric layer to fill in the voids within the porous nanotube fabric layer while one or more other material layers are applied adjacent to the nanotube fabric layer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the nanotube fabric layer) is used to form a barrier layer within a nanotube fabric layer. In other embodiments, individual nanotube elements are combined with and nanoscopic particles to limit the porosity of a nanotube fabric layer.

Methods for forming nanotube fabric layers with increased density

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

Cross point arrays of 1-R nonvolatile resistive change memory cells using continuous nanotube fabrics

Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same

Methods for arranging nanotube elements within nanotube fabrics and films

Methods for passivating a carbonic nanolayer

Methods for arranging nanoscopic elements within networks, fabrics, and films

Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

The present technique relates to a method and apparatus to provide a dielectric etch stop layer that prevents shorts for a buried digit layer as an interconnect. In a memory device, such as DRAM or SRAM, various layers are deposited to form structures, such as PMOS gates, NMOS gates, memory cells, P+ active areas, and N+ active areas. These structures are fabricated through the use of multiple masking processes, which may cause shorts when a buried digit layer is deposited if the masking processes are misaligned. Accordingly, a dielectric etch stop layer, such as aluminum oxide AlOor silicon carbide SiC, may be utilized in the array to prevent shorts between the wordlines, active areas, and the buried digit layer when the contacts are misaligned.

Method and apparatus for fabricating a memory device with a dielectric etch stop layer

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Eagle, ID, United States of America

H Montgomery Manning