Northrop Grumman Systems Corporation

H McDonald Hobgood

Richard H Hopkins

Godfrey Augustine

Vijay Balakrishna

R Noel Thomas

Method and apparatus for growing semiconductor grade silicon carbide boules (84). Pure silicon feedstock (36) is melted and vaporized. The vaporized silicon is reacted with a high purity carbon-containing gas (64), such as propane, and the gaseous species resulting from the reaction are deposited on a silicon carbide seed crystal (50), resulting in the growth of monocrystalline silicon carbide.

Method and apparatus for growing high purity single crystal silicon

A method of growing 4-H polytype silicon carbide crystals in a physical vapor transport system where the surface temperature of the crystal is maintained at less than about 2160.degree. C. and the pressure inside the PVT system is decreased to compensate for the lower growth temperature.

Growing community of inventors

Pittsboro, NC, United States of America

H McDonald Hobgood