Infineon Technologies Ag

Infineon Technologies Austria Ag

Günter Denifl

Hans-Joachim Schulze

Oliver Blank

Michael Stadtmueller

Saurabh Roy

Stefan Karner

Germano Galasso

Roland Rupp

Francisco Javier Santos Rodriguez

Peter Irsigler

Wolfgang Lehnert

Thomas Grille

Ulrich Schmid

Markus Kahn

Ursula Hedenig

Daniel Maurer

Tobias Frischmuth

Martin Huber

Tobias Hoechbauer

A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; a trench formed in a first main surface of the semiconductor substrate; a field plate electrode in the trench and reaching a same level as the first main surface of the semiconductor substrate; an insulating material that separates the field plate electrode from the semiconductor substrate; and a material embedded in the field plate electrode. The field plate electrode is made of a different material than the material embedded in the field plate electrode. The trench adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. Additional device embodiments and methods of producing the semiconductor device are also described.

Power semiconductor device having an electrode with an embedded material

A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.

Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers

A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.

Power semiconductor device having a strain-inducing material embedded in an electrode

A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.

Micromechanical structure and method for fabricating the same

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Annenheim, Austria

Günter Denifl