Samsung Electronics Co., Ltd.

Gyuseong Kim

Hyun-Jin Shin

Sanggyeong Won

A flash memory includes a first memory cell connected with a selected word line and a first bit line, a second memory cell connected with the selected word line and a second bit line, a sense amplifier that provides a sensing line with a sensing current for sensing data stored in the first memory cell or the second memory cell, a bit line selection circuit that selects a bit line by connecting the sensing line with the first bit line or the second bit line, and a margin read test circuit that performs a margin read test operation in which the margin read test circuit provides the sensing line with a margin current for testing a read margin of the data stored in the first memory cell or the second memory cell that is connected to the selected bit line.

Flash memory for performing margin read test operation and margin read test system including the same

Provided a voltage generating circuits including assist circuits and operating methods thereof. The voltage generating circuit which includes an assist circuit that generates an assist signal indicating an enable mode or a disable mode. When a first power supply voltage is lower than an assist reference voltage, the assist signal indicates the enable mode, and a compensation circuit generates a compensation signal based on the first power supply voltage. An internal voltage converter generates a regulated voltage based on the first power supply voltage, and a charge pump circuit generates a pump voltage based on the regulated voltage. The compensation signal compensates for the regulated voltage.

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Suwon-si, South Korea

Gyuseong Kim