Electronics and Telecommunications Research Institute

Gyung-Ock Kim

O-Kyun Kwon

Jung-Ho Song

Dong-Woo Suh

Young-Ahn Leem

Jung-Hyung Pyo

In-Gyoo Kim

Ki-Soo Kim

Hyun-Tak Kim

Kwang-Yong Kang

Sun-Jin Yun

Bong-Jun Kim

Yong-Wook Lee

Byung-Gyu Chae

Jong-Moo Lee

Duk-Jun Kim

Dong-Wan Roh

Yong-Seok Choi

Junghyung Pyo

Mi-Ran Park

Hye-Yong Chu

Jeong-Woo Park

Young-Wan Choi

Sung-Lyul Maeng

Pyong-Woon Park

Jung-Wook Lim

Doo-Hyeb Youn

Seon-Gyu Han

Hyuk-Je Kwon

Jong-Bum You

Seung-Won Paek

Disclosed are an apparatus and method for interfacing between a central processing unit (CPU) and a main memory unit, whereby a shared cache memory unit and the main memory unit are connected to each other using one optical signal transmission line. The apparatus for interfacing between the CPU and the main memory unit includes: a master optical connection protocol engine, converting operation control signals received from a shared cache memory unit of the CPU into serial signals; a first electrical-to-optical (E/O) converter, converting the serial signals converted by the master optical connection protocol engine into optical signals; a second E/O converter, converting the optical signals converted by the first E/O converter into serial signals; a slave optical connection protocol engine, converting the serial signals converted by the second E/O converter into operation control signals; and a memory controller having access to the main memory unit.

Apparatus and method for interfacing between central processing unit and main memory unit

Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 &#x3bc;m to about 0.5 &#x3bc;m. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.

Semiconductor integrated circuits including optoelectronic device for changing optical phase

Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Semiconductor device and method for forming the same

Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Semiconductor integrated circuits including grating coupler for optical communication and methods of forming the same

Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.

Lithium secondary battery including discharge unit

Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.

Method of forming optical waveguide

Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.

Hybrid laser diode for single mode operation and method of fabricating the same

Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Method of fabricating semiconductor device

Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.

Low-voltage noise preventing circuit using abrupt metal-insulator transition device

Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.

Waveguide structure and arrayed waveguide grating structure

Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

High-power, broad-band, superluminescent diode and method of fabricating the same

Provided are a gas sensing apparatus and a gas sensing method using the apparatus. The gas sensing apparatus includes a detection chamber, a light source, a light sensor, a gas source, and a controller. The light source is disposed at one end of the detection chamber, and a light sensor is disposed at the other end of the detection chamber. The gas source provides gas to the detection chamber. The controller controls the light source and the light sensor. The light source includes a laser supplying laser light, and a light scanner reflecting and scanning the laser light in the detection chamber. The controller includes a phase sensitive detector electrically connected to the light sensor.

Gas sensing apparatus and method of sensing gas using the same

Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.

Hybrid laser diode

A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

Growing community of inventors

Seoul, South Korea

Gyung-Ock Kim