Samsung Electronics Co., Ltd.

Gyu-Yeol Lee

Sung-Wook Park

Sung-Hun Lee

Ki-Yong Kim

In a semiconductor device, a first gate structure is provided in a cell transistor region and includes a floating gate electrode, a first dielectric layer pattern, and a control gate electrode including a first metal silicide pattern. A second gate structure is provided in a selecting transistor region and includes a first conductive layer pattern, a second dielectric layer pattern, and a first gate electrode including a second metal silicide pattern. A third gate structure is provided in a peripheral circuit region and includes a second conductive layer pattern, a third dielectric layer pattern including opening portions on the second conductive layer pattern, and a second gate electrode including a concavo-convex portion at an upper surface portion thereof and a third metal silicide pattern. The third metal silicide pattern has a uniform thickness.

Semiconductor devices including a gate electrode and methods of manufacturing the same

Gate structure including a metal silicide pattern in which an upper surface portion of the metal silicide pattern includes concavo-convex portions and semiconductor devices including the same

Growing community of inventors

Hwasung, South Korea

Gyu-Yeol Lee