Samsung Electro-mechanics Co., Ltd.

Korea Advanced Institute of Science and Technology

Gyu Suck Kim

Yoo Sam Na

Song Cheol Hong

Moon Suk Jeong

Hyeon Seok Hwang

Byeong Hak Jo

Ki Yong Son

Bon Hoon Koo

Seung Hoon Kang

Yoo Hwan Kim

Soo Woong Lee

Hyun Paek

Nam Heung Kim

Yun Su Jin

Yo Sub Moon

Moon Sun Kim

Ki Sung Kwon

Kyoung Seok Park

Shin Hwan Hwang

Sung Cheol Shin

Jin Taek Lee

Su Gyeong Kim

Disclosed herein are a transformer and a method of manufacturing the same. The transformer includes: a primary side winding having a loop shape; a secondary side winding formed on the same plane as that of the primary side winding in a remaining section except for at least a section at which it intersects with the primary side winding and having the same loop shape as that of the primary side winding so as to be electromagnetically coupled to the primary side winding; and an intersecting section formed so that the primary side and secondary side windings having the sum of the turn numbers of 3 or more intersect with each other in a two-layer structure, wherein the intersecting section includes at least one point of intermediate node having one side connected in a first layer and the other side connected in a second layer.

Transformer and method of manufacturing the same

A power amplifier includes a common source amplifier and a common gate amplifier circuit. The common source amplifier circuit has a terminal connected to a radio frequency (RF) input terminal and uses a source terminal commonly as an input terminal and an output terminal of the power amplifier. The common gate amplifier circuit has a terminal connected to the common source amplifier circuit and another terminal connected to an RF output terminal, and uses a gate terminal commonly as the input terminal and the output terminal of the power amplifier. The common gate amplifier circuit includes a Doherty amplifier including a main power amplifier and an auxiliary power amplifier that is connected to the main power amplifier in parallel.

Common gate amplifier circuit and power amplifier using the same

A power amplifier according to examples includes an amplifying circuit configured to amplify an input signal, a feedback circuit configured to feedback the amplified signal to the amplifying unit, and a feedback controlling circuit configured to control a power of the fed-back signal based on a power of the input signal. The feedback controlling unit performs controlling so that the power of the fed-back signal is increased as the power of the input signal is increased.

Power amplifier

A power amplifier include an amplifier including at least one field effect transistor (FET) that operates in an amplifying stage configured to amplify an input signal, and a body controller configured to control a bias voltage of a body terminal of the FET based on a power of the input signal. The body controller performs controlling so that the bias voltage of the body terminal is reduced in response to the power of the input signal being increased. Accordingly, such a power amplifier exhibits improved linearity.

A power amplifier apparatus may include an amplifier configured to amplify an input signal and a delay transferring circuit connected between an input terminal and an output terminal of the amplifier, the delay transferring circuit configured to delay the input signal to transfer the delayed input signal to the output terminal of the amplifier.

Power amplifier and phase correction method therefor

There is provided a power amplifier capable of increasing linear output power and efficiency without sacrificing an overall gain by employing a vector modulation function in a driving stage, with no separate vector modulator. The power amplifier includes a driving stage performing vector-modulation on an input RF signal to provide an I channel signal and a Q channel signal having different phases and amplifying the I channel signal and the Q channel signal to set gains; and a power stage amplifying power levels of the signals amplified by the driving stage.

There is provided a power amplifier module having a bias circuit, in which a bias power is supplied to an amplifier by differently setting an impedance between an input signal terminal and a reference power terminal and an impedance between the input signal terminal and a ground. The power amplifier module includes: an amplifier unit receiving a bias power to amplify an input signal; and a bias unit supplying the bias power to the amplifier, by differently setting an impedance between an input signal terminal transmitting the input signal therethrough and a reference power terminal transmitting a reference power having a predetermined voltage level and an impedance between the input signal terminal and a ground.

Power amplifier module having bias circuit

There is provided a complementary metal oxide semiconductor (CMOS) power amplifier including: a load unit connected between an operating voltage supply terminal and an output terminal; an amplifying unit formed as a cascode structure between the load unit and a ground, amplifying a power of an input signal input through an input terminal and outputting the amplified signal through an output terminal; and a threshold voltage control unit varying a threshold voltage of the amplifying unit according to a magnitude of the input signal input through the input terminal.

There is provided a power amplifier capable of supplying variable bias to an amplifier circuit by accurately transferring the envelope components of an input signal during the supply of active bias power to the amplifier circuit. The power amplifier includes: an envelope detector detecting an envelope of an input signal; a bias power generator including at least one P-type MOSFET and one N-type MOSFET connected to each other in an inverter manner between a driving power terminal supplying driving power having a preset voltage level and a reference bias power terminal supplying preset reference bias power to generate bias power varied according to detection results from the envelope detector; and an amplifier amplifying the input signal according to the bias power level from the bias power generator.

Disclosed herein is a power amplifier. The power amplifier includes a first common source transistor for amplifying an input signal into a predetermined level, a second common source transistor for compensating for input capacitance and performing auxiliary amplification for the first common source transistor, and a common gate transistor connected to the first common source transistor in a cascode structure, configured to be connected in parallel to the second common source transistor and prevent the first common source transistor from breaking down, and configured to output a signal amplified by a value obtained by adding the gain of the first common source transistor and the gain of the second common source transistor to each other.

Power amplifier break down characteristic

Provided is a current sampling mixer that can be applied to a broadband broadcasting system. The current sampling mixer can change a structure of a current sampler including a plurality of capacitors to select and sum capacitors having a weight value given in the output, thereby performing a finite impulse response filter function and a harmonic rejection function.

Current sampling mixer with harmonic rejection

A phase frequency detector for improving in-band phase noise characteristics of a PLL is disclosed. The phase frequency detector compares a reference frequency with a division frequency created by dividing an output frequency of a voltage controlled oscillator (VCO) by a predetermined division ratio, creates a phase-difference signal corresponding to a phase difference between the reference frequency and the division frequency, and improves noise characteristics.

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Seoul, South Korea

Gyu Suck Kim