Samsung Electronics Co., Ltd.

Gyu-Hwan Ahn

Sung-Soo Kim

Sang-Jin Hyun

Dong-Hyun Roh

Chae-Ho Na

Soo-Jung Choi

A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and a lower portion extending into an upper portion of the substrate, the lower portion contacting the upper portion of the third isolation pattern, and having a lower surface with a width greater than that of an upper surface thereof, and a second isolation pattern extending in the substrate under the third isolation pattern, contacting the third isolation pattern, and having a rounded lower surface.

Semiconductor devices

A semiconductor device may include active fins spaced apart from each other by a recess therebetween, each of the active fins protruding from an upper surface of a substrate, an isolation structure including a liner on a lower surface and a sidewall of a lower portion of the recess and a blocking pattern on the liner, the blocking pattern filling a remaining portion of the lower portion of the recess and including a nitride, a carbide or polysilicon, a gate electrode structure on the active fins and the isolation structure, and a source/drain layer on a portion of each of the active fins adjacent to the gate electrode structure.

Growing community of inventors

Gunpo-si, South Korea

Gyu-Hwan Ahn