Eugene Technology Co., Ltd.

Gyu Ho Choi

Sung Ho Kang

Chang Dol Kim

Jeong Hee Jo

Hong Won Lee

Kyu Jin Choi

Sang Young Oh

Sang Hyuk Hwang

The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.

Method for removing impurities in thin film and substrate processing apparatus

A substrate processing system includes: first and second process tubes spaced apart from each other in a first axial direction to provide process spaces independent from each other; a substrate boat on which a plurality of substrates are multiply stacked and which is provided to each of process spaces of the first and second process tubes; and first and second boat elevation units provided to the first and second process tubes, respectively, to elevate the substrate boat, wherein each of the first and second boat elevation units includes an elevation shaft member disposed in a space between the first and second process tubes.

Substrate processing system

Provided is a batch-type substrate processing apparatus which supplies, into a processing space, a process gas decomposed in a separate space. The substrate processing apparatus includes: a tube; a substrate support part; a gas supply pipe; an exhaust part; and a plasma reaction part, wherein the plasma part may include a plurality of power supply electrode parts and a ground electrode part.

Batch type plasma substrate processing apparatus

A substrate processing apparatus in accordance with an exemplary embodiments include: a first tube configured to provide a processing space in which a plurality of substrates are processed; a substrate support part configured to load the plurality of substrates in a first direction in the processing space; a plurality of gas supply parts provided with supply ports for supplying a process gas required for a process in which the substrates are processed; an exhaust part configured to communicate with the first tube and discharge process residues inside the processing space to the outside; and a plasma reaction part provided outside the first tube, and configured to decompose, with plasma, the process gas supplied from the gas supply part and provide the decomposed process gas to the processing space.

Growing community of inventors

Yongin-si, South Korea

Gyu Ho Choi