Samsung Electronics Co., Ltd.

Gyoyoung Jin

Yoosang Hwang

Jiyoung Kim

Hyun-Woo Chung

Hyeongsun Hong

Dongsoo Woo

Daeik Kim

Kang-Uk Kim

Jemin Park

Yongchul Oh

Sungkwan Choi

Kyuhyun Lee

Nara Kim

A semiconductor device may include a semiconductor substrate with first and second spaced apart source/drain regions defining a channel region therebetween and a control gate structure on the channel region between the first and second spaced apart source/drain regions. More particularly, the control gate structure may include a first gate electrode on the channel region adjacent the first source/drain region, and a second gate electrode on the channel region adjacent the second source/drain region. Moreover, the first and second gate electrodes may be electrically isolated. Related devices, structures, methods of operation, and methods of fabrication are also discussed.

Methods of operating and forming semiconductor devices including dual-gate electrode structures

A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first surface and a second surface opposite the first surface, forming an alignment key and a connection contact that penetrate a portion of the semiconductor substrate and extend from the first surface toward the second surface, forming a first circuit on the first surface of the semiconductor substrate such that the first circuit is electrically connected to the connection contact, recessing the second surface of the semiconductor substrate to form a third surface exposing the alignment key and the connection contact, and forming a second circuit on the third surface of the semiconductor substrate such that the second circuit is electrically connected to the connection contact.

Semiconductor devices and methods for fabricating the same

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Seoul, South Korea

Gyoyoung Jin