Samsung Electronics Co., Ltd.

Gyo-Soo Choo

Duk-Min Kwon

Chi-Weon Yoon

Ji-Hyun Park

Moo-sung Kim

Chang-Bum Kim

Chung-Ho Yu

Pil-Seon Yoo

A voltage generator of a nonvolatile memory device includes a charging circuit, a current mirror circuit, a discharging circuit and an output circuit. The charging circuit amplifies a difference between a reference voltage and a feedback voltage to generate a first current. The current mirror circuit is connected to the charging circuit and generates a second current based on the first current. The discharging circuit is connected to the current mirror circuit to draw the second current, and discharges the output voltage to a target level by adjusting discharging amount of the second current based on a sensing voltage which reflects a change of the feedback voltage. The output circuit is connected to the current mirror circuit, and provides the output voltage based on the first current and the second current to a first word-line connected to an output node.

Voltage generator for a nonvolatile memory device, and a method of operating the voltage generator

A variable voltage generation circuit includes a first amplification circuit and a second amplification circuit. The first amplification circuit generates a first output voltage based on a reference voltage, a first feedback voltage, a temperature-varied voltage and a temperature-fixed voltage such that the first output voltage is varied in a first voltage range according to a variation of the operational temperature. The first amplification circuit generates the first feedback voltage based on the first output voltage. The second amplification circuit generates a second output voltage based on the first feedback voltage, a second feedback voltage, the temperature-varied voltage and the temperature-fixed voltage such that the second output voltage is varied in a second voltage range wider than the first voltage range according to the variation of the operational temperature. The second amplification circuit generates the second feedback voltage based on the second output voltage.

Variable voltage generation circuit and memory device including the same

In a method of programming a nonvolatile memory device, a program operation is performed on a selected memory cell coupled to a selected word line in response to a program command, a negative bias voltage is applied to the selected word line, a verification pass voltage is applied to an unselected word line after the negative bias voltage is applied to the selected word line, and a first program verification voltage, which is higher than the negative bias voltage and lower than a ground voltage, is applied to the selected word line.

Nonvolatile memory devices and methods of programming and reading nonvolatile memory devices

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Yongin-si, South Korea

Gyo-Soo Choo