Samsung Electronics Co., Ltd.

Gyeonghee Lee

Seungjae Jung

Hyunji Song

Jae Hoon Kim

Yong-Hoon Son

Kwang-Ho Park

Jaehoon Kim

Yonghoon Son

Kwangho Park

A semiconductor memory device is disclosed. The device includes a peripheral circuit structure on a substrate, a semiconductor layer on the peripheral circuit structure, an electrode structure on the semiconductor layer, the electrode structure including electrodes stacked on the semiconductor layer, a vertical channel structure penetrating the electrode structure and being connected to the semiconductor layer, a separation structure penetrating the electrode structure, extending in a first direction, and horizontally dividing the electrode of the electrode structure into a pair of electrodes, an interlayered insulating layer covering the electrode structure, and a through contact penetrating the interlayered insulating layer and being electrically connected to the peripheral circuit structure.

Method for forming a three-dimensional semiconductor memory device with an improved etching step

An integrated circuit device includes a plurality of semiconductor layers stacked on a substrate to overlap each other in a vertical direction and longitudinally extending along a first horizontal direction. The plurality of semiconductor layers may have different thicknesses in the vertical direction.

Method of manufacturing integrated circuit device

A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.

Semiconductor memory device

Three-dimensional semiconductor memory device with concave convex separation structures

Integrated circuit device and method of manufacturing the same

Growing community of inventors

Hwaseong-si, South Korea

Gyeonghee Lee