Samsung Electronics Co., Ltd.

Hitachi, Ltd.

Dongguk University Industry-Academic Cooperation Foundation

Hitachi-High-Technologies Corporation

Hitachi High-Technologies Co.

Gyeong-su Park

Han-su Kim

Jae-man Choi

Moon-seok Kwon

Hoon Young Cho

In-yong Song

Shohei Terada

Kazutoshi Kaji

Sung Heo

Jong-bong Park

Tatsumi Hirano

Dong-wook Kwak

Se-ahn Song

A silicon nanowire including metal nanoclusters formed on a surface thereof at a high density. The metal nanocluster improves electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.

Silicon nanowire comprising high density metal nanoclusters and method of preparing the same

A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.

A method for evaluating thin films comprises the steps of inputting measurement conditions, generating electron beams from an electron source to condense the electron beams to a specimen by a condenser lens, enlarging the electron beams transmitted by the specimen with imaging lenses to image an enlarged image of the specimen, acquiring elemental maps of the specimen with an element analyzer to display the acquired elemental maps, measuring a length of the elemental maps, and correcting the measurement conditions. Disclosed is an evaluating apparatus that implements the above evaluating method.

Method and apparatus for evaluating thin films

A standard sample for transmission electron microscopy (TEM) elemental mapping and a TEM elemental mapping method using the same are provided. The standard sample includes a substrate; a first crystalline thin film containing heavy atoms formed on the substrate; a first amorphous thin film having oxides or nitrides containing light atoms and having a thickness of 1&#x2013;5 nm or 6&#x2013;10 nm formed on the first crystalline thin film; a second crystalline thin film containing heavy atoms formed on the first amorphous thin film. The standard sample can be used to correct TEM, EDS and EELS mapping results of a multi-layered nanometer-sized thin film and to optimize mapping conditions.

Standard sample for transmission electron microscope (TEM) elemental mapping and TEM elemetal mapping method using the same

Growing community of inventors

Suwon-si, South Korea

Gyeong-su Park