Samsung Electronics Co., Ltd.

Gyeong-su Keum

Seung-Ki Chae

Young-Tae Kim

Tai-Kyung Kim

Hyung-Sik Hong

Ui-hui Kwon

Wan-Goo Hwang

Kwang-Ho Cha

Chung-Hun Park

Won-young Chung

Jae-Im Yun

Jai-hyung Won

Young-kwan Park

Ki-chul Hyun

The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Ion implanters having an arc chamber that affects ion current density

A method and an apparatus for measuring an inclination angle of an ion beam when ions are implanted into a semiconductor wafer include an ion current measuring section having a Faraday cup assembly which is rotatably installed, an angle varying section for adjusting an alignment angle of the Faraday cup assembly, and an inclination angle measuring section for measuring the inclination angle of the ion beam based on a variation of the ion current caused by a variation of the alignment angle of the Faraday cup assembly. By measuring the inclination angle of the ion beam, the incident angle of the ion beam, which is incident into the wafer during the ion implantation process, can be precisely adjusted to a predetermined critical angle. Accordingly, the channeling effect and shadow effect can be effectively prevented. The amount of the ions included in the ion beam can be precisely measured, so the amount of ions implanted into the wafer can be precisely adjusted.

Method and apparatus for measuring inclination angle of ion beam

An inspection system and method for inspecting a sidewall of a wafer to detect a wafer having a sidewall defect. The inspection system includes, a wafer revolver driven by a driving source for rotating the wafer, an image capturing unit for capturing image information of the sidewall of the wafer rotating by the wafer revolver, and an analyzer comparing captured image data to image data of a desired wafer sidewall and determining whether the inspected wafer is acceptable in accordance with the comparison. The image capturing unit may include an illuminator for illuminating the sidewall of the wafer rotated by the wafer revolver and a detector for capturing image data for the sidewall of the wafer illuminated by the illuminator.

Wafer sidewall inspection system and method

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Gyeonggi-do, South Korea

Gyeong-su Keum