Samsung Electronics Co., Ltd.

Gyeong-Su Keum

Hyung-Sik Hong

Chung-Hun Park

Sang-Mun Chon

Seung-Ki Chae

Eun-Seok Song

Tai-Kyung Kim

Yun-sik Yang

Kyue-Sang Choi

Ui-hui Kwon

Jae-Han Park

Kwang-Ho Cha

Won-Young Chung

Doo-Guen Song

Tae-Sub Im

Jae-Hyun Han

Hyun-Kyu Kang

Gum-Hyun Shin

Byoung-Sik Jung

Ki-Cheol Choi

Hae-Keun Youn

Gum-Chan An

Sang-Yeob Cha

Gil-Jung Yun

A filament member configured to discharge thermions may be employed in an ion source of an ion implantation apparatus. A filament member may include an anode disposed around a central portion of the filament member, a cathode disposed around a periphery of the filament and/or enclosing the anode, and at least one conductive path disposed between the anode and the cathode to discharge the thermions.

Filament member, ion source, and ion implantation apparatus

In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Ion implanting apparatus and ion implanting method using the same

A polarity exchanger and ion implanter include a stripping canal for passing an ion beam therethrough, a gas supply unit for providing a stripping gas into the stripping canal to change a polarity of the ion beam, a gas circulation unit for circulating the stripping gas, a flow meter for measuring a flow rate of the stripping gas, an ammeter for measuring a driving current applied to the gas circulation unit for operating the gas circulation unit, and a monitoring unit for generating a control signal to control a process for changing the polarity of the ion beam in accordance with the measured flow rate of the stripping gas and the measured driving current. The polarity exchanger and ion implanter having the polarity exchanger may prevent generation of metallic contaminants caused by a flow rate variation of the stripping gas or deterioration of a component of the gas circulation unit.

Polarity exchanger and ion implanter having the same

A heater assembly of a semiconductor device manufacturing apparatus minimizes a temperature difference between a peripheral portion and a central portion of the wafer being processed in the apparatus. The heater assembly includes a unitary resistive heating member in the form of a disc, heat blocks that divide the peripheral portion and central portion of the upper surface of the disc into respective heating sections, a support for supporting the heating member, and an electric power source for supplying electric current to the unitary heating member. The widths of the heating sections become greater towards the center of the heater, and thus the electrical resistance of the heater also increases in a direction towards the center of the heater. The power source for the heater includes a lead that extends from the bottom surface of the heater to a bottom portion of the heater support.

Heater assembly for heating a wafer

An apparatus for use in orienting an object at a reference angle includes a pin gauge having at least two projections located at an end of the body of the apparatus. The projections are located at certain X Y coordinates of an X, Y Z Cartesian coordinate system. A horizontal support supports the body so as to be movable horizontally in the longitudinal direction of the projections. A mechanical drive member is operable to move the body mechanically in the horizontal direction. The apparatus may also include a vertical support and vertical drive member. The pin gauge is mechanically moved into contact with a surface of an object to provide a reference angle for the object. Then the object is pivoted, if necessary, to bring the surface into point contact with all of the projections of the pin gauge, whereupon the object is oriented at the reference angle. Process errors in aligning the object using the reference angle are reduced because the orienting of the object at the reference angle is accomplished using mechanical elements.

Method of and apparatus for use in orienting an object at a reference angle

A parameter monitoring apparatus for a high voltage chamber in a semiconductor wafer processing system monitors parameters in the high voltage chamber in real time by converting an electrical signal generated from the high voltage chamber into an optical signal using an electro-optical converter. The optical signal is then converted back into an electrical signal again by an opto-electrical converter. The parameters can be monitored in real time without damaging measurement devices, since they are not influenced by the potential difference between the high voltage chamber and the measurement device.

Real time parameter monitoring apparatus for high voltage chamber in semiconductor wafer processing system

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