Samsung Electronics Co., Ltd.

Gyeong Seon Park

Seung Woo Choi

Tae Hun Kim

Tae Hyung Kim

Myong Soo Cho

Yu Seung Kim

Gi Bum Kim

Jae In Sim

Yung Ho Ryu

Sung Joon Kim

Jong Hoon Lim

O Hak Kwon

Kyung Ja Lim

Shi Young Lee

A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same

There is provided a substrate separation device and method for separating a growth substrate from a laminate structure which includes a support substrate, a semiconductor layer, and the growth substrate. The device includes: a first base which is configured to hold the laminate structure thereon, and includes a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure and a heating unit configured to heat the laminate structure; and a second base including a second holding unit disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure.

Substrate separation device and substrate separation system

A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

Semiconductor light emitting device and method of manufacturing the same

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Seoul, South Korea

Gyeong Seon Park