Samsung Electronics Co., Ltd.

Gyeo-Re Lee

Young-Lim Park

Yong-Ho Ha

Dong-Ho Ahn

Hyeong-Geun An

Joon-Sang Park

Jun-Young Jang

Han-Bong Ko

Dong-Won Lim

Young-Soo Lim

A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180&#xb0; of a circular arc.

Nonvolatile memory cells having phase changeable patterns therein for data storage

Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.

Methods of forming phase change memory devices having bottom electrodes

Growing community of inventors

Seoul, South Korea

Gyeo-Re Lee