Lg Electronics Inc.

Gyeayoung Kwag

Taeyoung Kwon

Sungjin Kim

Jinsung Kim

Seongeun Lee

Minho Choi

Haejong Cho

Sangwook Park

Junyong Ahn

Juhwa Cheong

Jinhyung Lee

Kyoungsoo Lee

Younggu Do

Youngsung Yang

Myungjun Shin

Mann Yi

Sungyeon Cho

Sungbong Ma

A solar cell includes a photoelectric conversion layer; and a front electrode on the photoelectric conversion layer, wherein the front electrode includes a plurality of first finger electrodes; a plurality of second finger electrodes; a bus electrode directly connected to at least one of the plurality of first finger electrodes; a plurality of connecting electrodes connected to the plurality of second finger electrodes, the plurality of connecting electrodes forming at least one space therebetween; and an auxiliary electrode formed at the at least one space, wherein the auxiliary electrode connects at least two connecting electrodes of the plurality of connecting electrodes.

Solar cell

A post-processing apparatus of a solar cell carries out a post-processing operation including a main period for heat-treating a solar cell including a semiconductor substrate while providing light to the solar cell. The post-processing apparatus includes a main section to carry out the main period. The main section includes a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate. The first heat source unit and the light source unit are positioned in the main section. The light source unit includes a light source constituted by a plasma lighting system (PLS).

Post-processing apparatus of solar cell

A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100&#xb0; C. to about 800&#xb0; C., and the temperature and light intensity of the main processing process satisfy Equation of 1750&#x2212;31.8&#xb7;T+(0.16)&#xb7;T&#x2266;I. Here, T is the temperate (&#xb0; C.) of the main processing process, and I is the light intensity (mW/cm) of the main processing process.

Method for manufacturing solar cell

A solar cell is discussed, which includes a pair of connecting electrodes having a portion having a width smaller than a width of a plurality of bus bar electrodes, and the pair of connecting electrodes connects a plurality of second finger electrodes to both sides of an end of one of the plurality of bus bar electrodes, respectively, wherein the end of the one of the plurality of bus bar electrodes being positioned in a second direction, wherein an area not including the plurality of second finger electrodes is positioned between the pair of connecting electrodes, and wherein an auxiliary electrode not connected to the plurality of second finger electrodes and having a width smaller than the width of the plurality of bus bar electrodes is disposed in the area not including the plurality of second finger electrodes.

A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.

Silicon solar cell and method of manufacturing the same

A solar cell includes a photoelectric conversion layer and a front electrode on the photoelectric conversion layer. The front electrode includes a bus bar electrode; at least one first finger electrode directly connected to the bus bar electrode; a plurality of connecting electrodes extending from the bus bar electrode and having a width smaller than a width of the bus bar electrode, wherein the plurality of connecting electrodes includes portions that are spaced apart from each other to form a space therebetween; at least one second finger electrode connected to at least one of the plurality of connecting electrodes; and an auxiliary electrode formed at the space between the portions of the plurality of connecting electrodes.

A solar cell includes a silicon semiconductor substrate; an emitter layer formed on a surface of the silicon semiconductor substrate; an antireflection layer formed on the emitter layer: and a front electrode electrically connected to the emitter layer by penetrating the antireflection layer. The front electrode includes a finger line and a busbar electrode electrically connected to the finger line, and the busbar electrode includes at least a first electrode line and a second electrode line electrically connected to each other. The first and second electrode lines have a width same as or larger than a width of the finger line, and the first and second electrode lines have the width of 100 &#x3bc;m or less.

Solar cell and method for manufacturing the same

A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type, a plurality of first electrodes connected to the emitter layer, at least one first current collector connected to the plurality of first electrodes, and a second electrode connected to the substrate. The emitter layer forms a p-n junction along with the substrate. Each of the plurality of first electrodes has a multi-layered structure, and the at least one first current collector has a single-layered structure.

A solar cell, a solar cell manufacturing device, and a method for manufacturing the solar cell are discussed. The solar cell manufacturing device includes a chamber; an ion implantation unit configured to implant ions into a substrate inside the chamber and a mask positioned between the ion implantation unit and the substrate. The mask includes a first opening to form a lightly doped region having a first concentration at one surface of the substrate, a second opening to form a heavily doped region having a second concentration higher than the first concentration at the one surface of the substrate, and at least one connector formed to cross the second opening. The second opening includes finger openings formed in a first direction, and bus openings formed in a second direction crossing the first direction.

Solar cell, solar cell manufacturing device, and method for manufacturing the same

A solar cell and a method of texturing a solar cell are disclosed. The method includes coating an ink containing metal particles on a surface of a substrate, drying the ink to attach the metal particles to the surface of the substrate, and differentially etching the surface of the substrate using the metal particles as a catalyst to form an uneven portion.

Growing community of inventors

Seoul, South Korea

Gyeayoung Kwag