Fairchild Korea Semiconductor Ltd.

Fairchild Korea

Semiconductor Ltd.

Gwi-gyeon Yang

Sung-Min Park

O-seob Jeon

Byoung-ok Lee

Young-gil Kim

Joo-sang Lee

Gi-young Jeun

Sung-won Lim

Seung-won Lim

Disclosed are complex semiconductor packages, each including a large power module package which includes a small semiconductor package, and methods of manufacturing the complex semiconductor packages. An exemplary complex semiconductor package includes a first package including: a first packaging substrate; a plurality of first semiconductor chips disposed on the first packaging substrate; and a first sealing member covering the first semiconductor chips on the first packaging substrate; and at least one second package separated from the first packaging substrate, disposed in the first sealing member, and including second semiconductor chips.

Complex semiconductor packages and methods of fabricating the same

Provided are a power device package, which can be made compact by vertically stacking substrates on which semiconductor chips are mounted, and a method of fabricating the power device package. The power device package includes: a first substrate comprising a first surface and a second surface opposite to each other, and a first wiring pattern formed on the first surface; one or more power semiconductor chips mounted on the first surface of the first substrate and electrically connected to the first wiring pattern; a second substrate vertically spaced apart from the first substrate and comprising a second wiring pattern; one or more first control semiconductor chips mounted on the second substrate and electrically connected to the second wiring pattern; a lead frame electrically connected to the first wiring pattern and the second wiring pattern; and a sealing member sealing the first substrate, the power semiconductor chips, the second substrate, the first control semiconductor chips, and at least a part of the lead frame so as to expose the second surface of the first substrate.

Power device package and method of fabricating the same

Provided are a power device package, which can be made compact by mounting semiconductor chips in recesses formed in a substrate and improve operational reliability by rapidly dissipating heat generated during operation to the outside, and a method of fabricating the power device package. The power device package includes: a substrate having a first surface and a second surface opposite to each other, and one or more recesses formed in the first surface; a wiring pattern formed on the first surface of the substrate; one or more power semiconductor chips placed in the recesses and electrically connected to the wiring pattern; a lead frame electrically connected to the wiring pattern; one or more control semiconductor chips electrically connected to the power semiconductor chips to control the power semiconductor chips; and an optional sealing member sealing the substrate, the wiring pattern, the power semiconductor chips, the control semiconductor chips, and at least a part of the lead frame so as to expose the second surface of the substrate.

A power module package is provided. The power module package includes a power circuit element, a control circuit element, a lead frame, a heat sink, and an epoxy molding compound (EMC). The control circuit element is connected to the power circuit and controls chips in the power circuit. The lead frame has external connecting means formed at the edges thereof, and a down set part, namely, formed between the external connecting means. The lead frame has a first surface to which the power circuit and the control circuit are attached, and a second surface used as a heat dissipating path, in particular, the power circuit is attached to the down set part. The heat sink which is closely attached to the down set part of the second surface of the lead frame by an adhesive. The EMC surrounds the power circuit, the control circuit, the lead frame and the heat sink, and exposes the external connecting means of the lead frame and a side of the heat sink.

Growing community of inventors

Icheon-si, South Korea

Gwi-gyeon Yang