Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Gwenaël Le Rhun

Emmanuel Defay

Henri Sibuet

Jean-Sébastien Danel

Christel Dieppedale

Romain Gwoziecki

Stéphane Fanget

Aurélien Suhm

Julie Abergel

Matthieu Cueff

Sylvain Pelloquin

André Rouzaud

The invention relates to a method for transferring at least one layer of material, comprising: producing first and second separating layers (), one against the other, on a first substrate (); producing the layer to be transferred on the second separating layer (); securing the layer to be transferred to a second substrate (), forming a stack of different materials; and performing mechanical separation at the interface between the separating layers; in which the materials of the stack are such that the interface between the first and second separating layers has the weakest adhesion force, and the method comprises a step reducing an initial adhesion force of the interface between the first and second separating layers.

Method for transferring at least one layer of material from a first substrate to a second substrate

A semiconductor device includes a substrate; a semiconductor structure arranged on the substrate, the semiconductor structure including at least one first semiconductor layer; an insulator layer arranged on the semiconductor structure; a field plate covering a part of the insulator layer, wherein the insulator layer includes a non-linear dielectric material having a permittivity that decreases as an electric field traversing the dielectric material increases.

Field plate semiconductor device

An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.

Integrated capacitor comprising an electrically insulating layer made of an amorphous perovskite-type material and manufacturing process

In a process for fabricating a membrane, including, on a substrate, a thin-film multilayer including a film of piezoelectric material placed between a top electrode film and a bottom electrode film and an elastic film supporting said piezoelectric film, the process includes: determining at least one concavity/convexity curvature of said membrane along an axis parallel to the plane of the films so that at least one inflection point is defined, said point allowing a first region and a second region, corresponding to a concave part and a convex part or vice versa, to be isolated; depositing, on the surface of the substrate, a thin-film multilayer including at least one film of piezoelectric material, one bottom electrode film and one top electrode film; and structuring at least one of the electrode films to define at least said first membrane region, in which an electric field perpendicular to the plane of the films may be applied, and at least said second region, in which an electric field parallel to the plane of the films may be applied.

Process for fabricating an optimally-actuating piezoelectric membrane

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Grenoble, France

Gwenaël Le Rhun