Samsung Electronics Co., Ltd.

Gwang-Seon Byun

Jin-Sung Kim

Hyuck-Jin Kang

Myoung-Ki Ahn

Jae-ryong Jung

Hong-Shik Kim

Hee-Kyeong Jeon

Tai-Heui Cho

Sun-Joon Kim

Hyun-Koo Kwak

Chang-Hyuk Ok

Su-Bong Shon

Yong-Jun Min

Ung-Keun Cho

Han-Saem Park

Heui-Won Shin

A method of analyzing lattice strain of a semiconductor device includes generating a spectrum image by performing a Fourier Transform on an image of a semiconductor device, providing a first hybrid mask filter t filter designed to select at least one peak frequency from the spectrum image, filtering the spectrum image using the first hybrid mask filter to generate a filtered spectrum image, and generating a first strain image by performing an inverse Fourier Transform on the filtered spectrum image.

Method of analyzing lattice strain of semiconductor device

A fuse of a fuse box includes a fuse line with a plurality of sub-fuse lines. A fuse cutting method involves selectively cutting sub-fuse lines of a fuse line.

Fuse box, method of forming a fuse box, and fuse cutting method

Integrated circuit devices are provided including an integrated circuit substrate and first through fourth spaced apart lower interconnects on the integrated circuit substrate. The third and fourth spaced apart lower interconnects are parallel to the first and second lower interconnects. A first fuse is provided on the first and second lower interconnects between the first and second lower interconnects and is electrically coupled to the first and second lower interconnects. A second fuse is provided spaced apart from the first fuse and on the third and fourth lower interconnects. The second fuse is between the third and fourth lower interconnects and is electrically coupled to the third and fourth lower interconnects. Related methods of fabricating integrated circuit devices are also provided.

Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same

Growing community of inventors

Gyeonggi-do, South Korea

Gwang-Seon Byun