Samsung Display Co., Ltd.

Gwang Min Cha

Jeong Min Park

Chang Oh Jeong

Jun Hong Park

Sang Woo Sohn

Dong Hee Lee

Jung Soo Lee

Su-Hyoung Kang

Sang Won Shin

Dong Min Lee

Chan Woo Yang

Su Kyoung Yang

Hyun Ju Kang

Su Hyoung Kang

A display device includes a substrate, a semiconductor layer disposed on the substrate, a first insulating layer disposed on the semiconductor layer, a first conductive layer disposed on the first insulating layer and electrically connected to the semiconductor layer via a first contact hole, which is defined through the first insulating layer, a second insulating layer disposed on the first conductive layer, and a second conductive layer disposed on the second insulating layer and electrically connected to the first conductive layer via a second contact hole, which is defined through the second insulating layer, where the first and second contact holes overlap each other, and a residual layer, which includes a portion of the second insulating layer, is disposed in the first contact hole.

Display device and manufacturing method thereof

A transistor is positioned on a substrate. The transistor includes a semiconductor layer. A buffer layer is positioned between the substrate and the semiconductor layer of the transistor, including an insulating material. A bottom layer is positioned between the substrate and the buffer layer. The bottom layer and the semiconductor layer overlap each other. The bottom layer includes a first layer, a second layer, and a third layer that are stacked on each other in a direction away from the substrate.

Transistor array panel

Provided is a metal wire. The metal wire includes a copper layer, and at least one barrier layer. The barrier layer is disposed on at least one of an upper part and a lower part of the copper layer. The barrier layer includes an alloy including copper, nickel, and zinc.

Metal wire having a copper layer and a barrier layer and display device including the same

A display device and a method of manufacturing the display device are provided. According to an exemplary embodiment, a display device includes: a substrate; a gate electrode disposed on the substrate; a semiconductor pattern disposed on the gate electrode; data wiring disposed on the semiconductor pattern and having a data line, a source electrode, and a drain electrode; a first barrier layer disposed between the data wiring and the semiconductor pattern; and undercuts disposed on at least one side of each segment of the first barrier layer.

A display device and a method of manufacturing the display device are disclosed. In one aspect, the method includes forming a sacrificial layer over a carrier substrate, forming a passivation barrier layer to cover upper and lateral sides of the sacrificial layer and forming a thin film transistor layer over the passivation barrier layer. The method also includes placing a mask over the thin film transistor layer so as to expose an edge portion of the passivation barrier layer, wherein the edge portion does not overlap the mask in the depth dimension of the display device. The method further includes removing the edge portion of the passivation barrier layer so as to form a barrier layer and separating the carrier substrate from the barrier layer via the sacrificial layer.

Display device and method of manufacturing the same

A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.

Growing community of inventors

Hwaseong-si, South Korea

Gwang Min Cha