Skhynix Inc.

Gwang Been Kim

Min Sung Ko

Young Ock Hong

Byung Woo Kang

Hwal Pyo Kim

Jin Taek Park

A semiconductor memory device includes a substrate including a peripheral circuit, a stepped dummy stack overlapping the substrate and including a plurality of steps extending in a first direction, a plurality of contact groups passing through the stepped dummy stack, and upper lines respectively connected to the contact groups. The contact groups include a first contact group having two or more first contact plugs arranged in the first direction. The upper lines include a first upper line commonly connected to the first contact plugs.

Growing community of inventors

Icheon-si, South Korea

Gwang Been Kim