Micron Technology Incorporated

Guy S Perry

Daniel B Penney

Harish Naga Venkata

Glen Earl Hush

David R Brown

William Chad Waldrop

A memory device includes a command interface configured to receive write commands from a host device. The memory device also includes an input buffer configured to buffer data from the host device. The memory device further includes a write shifter configured to receive a first write command of the write commands and to shift the first command through the write shifter. The write shifter is also configured to cause the input buffer to be disabled after a first threshold of clock cycles when the first write command has shifted through the write shifter. The write shifter is additionally configured to receive a second write command and prevent the input buffer from being re-enabled until the second write command has shifted through a second threshold of stages of the write shifter.

Synchronous input buffer control using a write shifter

The present disclosure includes apparatuses and methods related to storing a data value in a sensing circuitry element. An example method comprises sensing a first data value with a sense amplifier of a sensing circuitry element, moving a second data value from a first storage location of a compute component to a second storage location of the compute component, and storing, in the first storage location, a third data value resulting from a logical operation performed on the first data value and the second data value. The logical operation can be performed by logic circuitry of the sensing circuitry element.

Apparatuses and methods for storing a data value in a sensing circuitry element

The present disclosure includes apparatuses and methods related to shifting data. An example apparatus comprises sensing circuitry including a sense amplifier and a compute component having a first storage location and a second storage location associated therewith. A controller is coupled to the sensing circuitry. The controller is configured to control an amount of power associated with shifting a data value stored in the first storage location to the second storage location by applying a charge sharing operation.

Shifting data in sensing circuitry

Apparatuses and methods related to column repair in memory are described. The sensing circuitry of an apparatus can include a first sensing component, a second sensing component, and a third sensing component. The second sensing component can include a defective sense amplifier that is column repaired. The apparatus can include a controller configured to use the sensing circuitry to shift data from the first sensing component to the third sensing component by transferring the data through the second sensing component. The second sensing component can be physically located between the first sensing component and the third sensing component.

Column repair in memory

Apparatuses and methods related to column repair in memory are described. An apparatus can include sensing circuitry. The sensing circuitry can include a first sensing component, a second sensing component, and a third sensing component. The second sensing component can include a defective sense amplifier that is column repaired. The apparatus can include a controller configured to use the sensing circuitry to shift data from the first sensing component to the third sensing component by transferring the data through the second sensing component. The second sensing component can be physically located between the first sensing component and the third sensing component.

A bond pad structure comprising two bond pads, methods of forming the bond pad structure, an integrated circuit die incorporating the bond pad structure, and methods of using the bond pad structure are provided. Each of the bond pads comprise stacked metal layers, at least one lower metal layer and an upper metal layer. When the two pads are connected by a conductive material, they function as a single pad. The lower metal layer of one of the bond pads forms an extension that extends beneath the upper metal layer of the other of the bond pad. The lower metal extension functions to block the etching of a dielectric layer that is put down over the upper metal layers and the underlying substrate, for example, during a passivation etch to form the bond pad opening, to protect the substrate from damage.

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Plano, TX, United States of America

Guy S Perry