Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Guy Oteri

Steven Robert Sherman

Rajesh Prasad

Kyu-Ha Shim

Andrew Michael Waite

Sungho Jo

Somchintana Norasetthekul

Frank Sinclair

Bon-Woong Koo

Paul J Murphy

Tseh-Jen Hsieh

D Jeffrey Lischer

Dawei Sun

Chi-Yang Cheng

Gregory Edward Stratoti

Wayne Chen

A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.

Model-based controlled load lock pumping scheme

As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and optionally the underlying material are disclosed. An etch rate modifying species is implanted into the hard mask after the mask etching process is completed. This etch rate modifying species increases the difference between the etch rate of the mask and the etch rate of the underlying material to help preserve the integrity of the mask during a subsequent etching process. In some embodiments, the etch rate of the mask is decreased by the etch rate modifying species. In certain embodiments, the etch rate of the underlying material is increased by the etch rate modifying species.

Etch rate modulation through ion implantation

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Merrimac, MA, United States of America

Guy Oteri