U.S. Philips Corporation

Guy Michel Jacob

Jean Philippe Hallais

Michel Boulou

An electroluminescent semiconductor device includes a monocrystalline substrate, an n-type gallium nitride layer on the substrate, an active gallium nitride layer on the n-type layer which is doped to at least full compensation of the natural donor impurities with acceptor impurities, a surface electrode for contacting the active layer and means for contacting the n-type layer. A part of the n-type layer, which extends parallel to the active layer and adjoins the active layer, is doped to less than full compensation by means of the acceptor impurities, and the net concentration of donor impurities is smaller than the concentration of natural impurities and is substantially homogeneous in the layer portion. Electroluminescent semiconductor devices in accordance with the invention feature improved efficiency as well as better reproducibility than prior art devices.

Electroluminescent gallium nitride semiconductor device

Method of manufacturing gallium nitride crystals by reaction of galium halide and ammonia in which free hydrogen chloride is introduced into the reaction and deposition zones.

Vapor deposition of single crystal gallium nitride

The invention relates to a method for the synthesis of a semiconductor compound comprising at least one element of column III of the periodic table of Mendeleev, and an element of column V having a vapor pressure higher than that of element(s) III at the synthesis temperature of the said compound, and according to which, in a closed space, a liquid mass of element(s) III, placed in a first zone of said space which is heated at relatively high temperatures and is contacted with vapors obtained by evaporation of element V, said element V being placed in a second zone of the said space in a non-gaseous form, the evaporation temperature of element V being higher than that of the coldest point provided in a third zone of the said space, and the said first zone being situated between the second and the third zone.

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Creteil, France

Guy Michel Jacob