Stmicroelectronics S.a.

Koninklijke Philips Corporation N.v.

Guy Mabboux

Steven M Labram

Pascal Salome

Sylvain Majcherczak

Juliette Weiss

Vincent Perque

The invention relates to a circuit of which the operating rate varies according to temperature, supply voltage and intrinsic quality of the transistors of the circuit, associated to a compensating circuit which comprises a constant current source ( ) that produces a substantially constant current which is independent of temperature, supply voltage and intrinsic quality of the transistors of the circuit, a variable current source ( ) producing a current that increases in an inverse proportion to temperature, supply voltage and intrinsic quality of the transistors of the circuit, and means for decreasing the operating rate of the circuit when the difference of the currents produced by the first and second sources increases.

CMOS output amplifier independent of temperature, supply voltage and manufacturing quality of transistors

An integrated circuit with a D.C./D.C. internal voltage regulator, including at least two power stages of the regulator, having respective terminals of connection to a supply voltage connected to distinct pads of the integrated circuit, and a single control stage.

Integration of a voltage regulator

In an integrated circuit, a detection device detects a drop in the supply voltage of the core of the integrated circuit or an excessively slow build-up of this voltage with respect to a supply voltage of the input/output interface circuits of the integrated circuit. Outputs of the interface circuits are set to a high impedance state by the detection device to minimize their power consumption.

Power supply detection device

A protection device includes a switching transistor (M ), connected between the gate of the output transistor (TS ) and ground, and a control circuit (CM), connected to the gate of the switching transistor (M ), which are capable of ensuring that the switching transistor (M ) is off when there is no electrostatic discharge at the drain of the output transistor (TS ) and capable of turning the switching transistor (M ) on when there is an electrostatic discharge at the drain of the output transistor (TS ).

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Chapareillan, France

Guy Mabboux