International Business Machines Corporation

Globalfoundries Inc.

King Abdulaziz City for Science and Technology

Tel Aviv University

Elpis Technologies Inc.

Guy M Cohen

Sarunya Bangsaruntip

Jeffrey W Sleight

Anirban Basu

Amlan Majumdar

Takashi Ando

Nanbo Gong

Lior Horesh

Paul Michael Solomon

Christian Lavoie

Kevin K Chan

Amos Cahan

Alfred Grill

Clifford A Pickover

James R Kozloski

Michael A Guillorn

Cyril Cabral, Jr

Katherine Lynn Saenger

Christos Dimitrios Dimitrakopoulos

Theodore Gerard Van Kessel

Alexander Reznicek

Shreesh Narasimha

Conal Eugene Murray

Devendra K Sadana

Marco Pistoia

Sufi Zafar

Hon-Sum Philip Wong

Isaac Lauer

Jack Oon Chu

Yu Zhu

Min Yang

David James Frank

Gregory J Boss

Ghavam G Shahidi

Josephine B Chang

Ying Di Zhang

Anne R Sand

Robert L Wisnieff

Brent A Wacaser

Sebastian Ulrich Engelmann

Hendrik F Hamann

Fuad Elias Doany

Tze-Chiang Chen

Vamsi Krishna Paruchuri

John Albrecht Ott

Steven Alan Cordes

Effendi Leobandung

Hariklia Deligianni

Jonathan Lenchner

Stephen McConnell Gates

Cheng-Wei Cheng

Lubomyr Taras Romankiw

Ahmet Serkan Ozcan

Meikei Ieong

Qiqing Christine Ouyang

Steven John Koester

Franco Stellari

Robert L Bruce

Kevin W Brew

Chun-Yung Sung

Matthew Joseph BrightSky

Leathen Shi

Nicholas C M Fuller

Qiang Huang

Kangguo Cheng

Ruilong Xie

Pouya Hashemi

Juntao Li

Stephen W Bedell

Ning Li

Daniel C Edelstein

Ramachandra Divakaruni

Julien Frougier

Andres Bryant

Kern Rim

Praneet Adusumilli

Fei Liu

Leland Chang

Chung-Hsun Lin

Martin Michael Frank

Teodor Krassimirov Todorov

Kuen-Ting Shiu

Nicholas Anthony Lanzillo

Damon B Farmer

Tymon Barwicz

Oki Gunawan

Talia S Gershon

Donald Francis Canaperi

Kafai Lai

Yun Seog Lee

Keith Aelwyn Jenkins

Anna Wanda Topol

Nathan P Marchack

Phaedon Avouris

Fenton Read McFeely

Huajie Chen

Heike E Riel

Heinz Schmid

Michael F Lofaro

Paul S Chang

A solid-state switch structure including a first solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following a first type programming pulse and a low electrical resistance obtained following a second type programming pulse, a second solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following said second type programming pulse and a low electrical resistance obtained following said first type programming pulse, a first contact made to a first end of said first solid-state material, a second contact made to a first end of said second solid-state material, a third contact made to a second end of said first solid-state material and to a second end of said second solid-state material.

Solid-state switch

An interconnect structure including conducting layers of topological semi-metals and/or topological insulators. To increase charge carrier density in the conducting layers, a charge carrier doping layer present on at least one surface of the one or more conductive layers of topological semi-metals. The charge carrying doping layers have a charge carrier density greater than the topological semi-metals and/or topological insulators of the one or more conductive layers.

Multi-layer topological interconnect with proximal doping layer

A device structure for a phase-change memory device is disclosed. The device structure includes a top electrode, a phase-change material that is recessed between two layers of resistive liner material, and a conductive material. The conductive material contacts the sidewall of the top electrode, the sidewall of the phase-change material, and a portion of a top surface and a bottom surface of each of the two layers of the resistive liner material. The device structure includes a heater contacting a bottom electrode and the bottom layer of the resistive liner material. The heater is in a first bilayer dielectric. A second bilayer dielectric is under the top electrode.

Phase-change memory device with conductive cladding

A non-volatile memory apparatus includes a first hydrogen reservoir, which is electrically conductive; a charge of hydrogen, which is captured in the first hydrogen reservoir; a dielectric layer that has a first side that is adjacent to the first hydrogen reservoir and a second side that is opposite from the first hydrogen reservoir; a second hydrogen reservoir that is adjacent to the second side of the dielectric layer, is electrically conductive, and has a side that is opposite from the dielectric layer; and a piezoelectric layer that is adjacent to the side of the second hydrogen reservoir and that has a side that is opposite from the second hydrogen reservoir.

Piezoelectric memory

An electronic device includes a first electrode, a second electrode, and a memory component configured to store a resistive state. The memory component includes a layered region arranged in direct contact with the first electrode and a bulk region arranged in direct contact with the second electrode. The layered region includes a plurality of first layers made of a first material and a plurality of second layers made of a second material alternatingly arranged with one another. The first material is a phase-change material and the second material is a non-phase-change material. The bulk region is a continuous mass made of a third material that is different than the first material and the second material, and the bulk region is in direct contact with at least two of the first layers and at least one of the second layers of the layered region.

Phase-change memory cell with mixed-material switchable region

A method for system authentication includes subjecting a system to a challenge. The method further includes receiving a response from the system. The received response is dependent upon a location of a filament in a resistive random-access memory device of the system. Additionally, the response is also a unique identifier.

RRAM filament location for physically unclonable function

A security key associated with a plurality of programmable switches included in an integrated circuit is received. The plurality of programmable switches are set causing the plurality of programmable switches to be conductive. Reset pulses are applied to a first set of programmable switches included in the plurality of programmable switches based on the received security key.

Integrated circuit security using programmable switches

A tunable nonvolatile resistive element, wherein the device conductance is modulated by changing the length of a contact between a phase change material and a resistive liner. By choosing the contact length to be less than the transfer length a linear modulation of the conductance is obtained.

Transfer length phase change material (PCM) based bridge cell

A structure for culturing cells includes growth medium regions on a surface of the structure. Each of the growth medium regions includes a growth medium surface configured to receive and promote growth in a cell that is being cultured. The structure includes a non-growth medium. The non-growth medium includes a non-growth medium surface configured to receive the cell that is being cultured.

Cell culturing structure including growth medium and non-growth medium

In an approach to a implementing a PUF based on a PCM array, for each PCM device in an array of PCM devices, the PCM device is reset to an initial state. A first conductance of the PCM device is measured. A predetermined number of partial set pulses is applied to the PCM device. A second conductance of the PCM device is measured. Responsive to determining that the second conductance is greater than the first conductance multiplied by a factor, a PUF value of the PCM device is set to logical '1'. Responsive to determining that the second conductance is less than the first conductance multiplied by a factor, a PUF value of the PCM device is set to logical “0”. The PUF value of the PCM device is added to an overall PUF string for the array of PCM devices.

Physically unclonable function based on a phase change material array

A medication dispenser system and use thereof for providing exact personal dosing for a patient are provided. In one aspect, a method for dispensing medications is provided. The method includes the steps of: obtaining patient information and a list of the medications for the patient; calculating a personal dose of each of the medications for the patient using the patient and cross-medication interaction information; and preparing treatments each containing the personal dose of each of the medications in a single treatment. In another aspect a system for dispensing medications includes: a patient information component for obtaining patient information and a list of the medications for the patient; a dosage calculator component for calculating a personal dose of each of the medications for the patient using the patient information; and a medication dispenser component for preparing treatments each containing the personal dose of each of the medications in a single treatment.

Medication dispenser system with exact personal dosing

An apparatus comprises a phase-change material, a first electrode at a first end of the phase-change material, a second electrode at a second end of the phase-change material, and a heating element coupled to a least a given portion of the phase-change material between the first end and the second end. The apparatus also comprises a first input terminal coupled to the heating element, a second input terminal coupled to the heating element, and an output terminal coupled to the second electrode.

Phase-change material-based XOR logic gates

A method for manufacturing a phase-change memory device includes providing a substrate including a plurality of bottom electrodes, patterning the substrate to form a plurality of pores in the substrate extending from a surface of the substrate to the bottom electrodes, depositing a phase-change material over the substrate, implanting one or more of a Ge, Sb and Te in the phase-change material to amorphize at least a portion of the phase-change material inside the pore, planarizing the device to exposed the surface of the substrate, and forming a plurality of top electrodes over the pores, in contact with the phase-change material.

Fill-in confined cell PCM devices

An approach for representing both positive and negative weights in neuromorphic computing is disclosed. The approach leverages a double gate FeFET (ferroelectric field effect transistor) device. The device leverages a double-gate FeFET with four terminals (two separate gates and source and drain) and ferroelectric gate dielectric. The device may have a junction-less channel. A synaptic weight is programmed by biasing one of the two gates. The store weight is sensed via a current flow from source to drain. A pre-defined bias is applied to the other gate during the sensing, such that a reference current is subtracted from the drain current. The net current for sensing is current from the synaptic devices subtracted by the pre-defined reference current.

FeFET with double gate structure

A method for forming a nonvolatile PCM logic device may include providing a PCM film component having a first end contact distally opposed from a second end contact, positing a first proximity adjacent to a first surface of the PCM film component, positing a second proximity heater adjacent to a second surface of the PCM film component, wherein the first proximity heater and the second proximity heater are electrically isolated from the PCM film component. The method may further include applying a combination of pulses to one or more of the first proximity heater and the second proximity heater to change a resistance value of the PCM film component corresponding to a logic truth table. Further, the method may include simultaneously applying a first combination of reset pulses to program, or set pulses to initialize, the PCM film component, to the first proximity heater and the second proximity heater.

Nonvolatile phase change material logic device

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Mohegan Lake, NY, United States of America

Guy M Cohen