Applied Materials Israel Limited

Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Xjet Ltd.

Guy Eytan

Konstantin Chirko

Irit Ruach-Nir

Igor Krivts (Krayvitz)

Michal Eilon

Yoram Uziel

Itamar Shani

Ofer Yuli

Dieter Winkler

Hanan Gothait

Natan Schlimoff

Alon Litman

Eli Kritchman

Jacob Levin

Israel Avneri

Rafael Bistritzer

Axel Benichou

Albert Karabekov

Samuel Ives Nackash

Yohai Dayagi

Timofey Shmal

Magen Yaacov Schulman

Lior Yaron

Sven Rühle

Itay Asulin

Lavy Shavit

Guy Shwartz

Yosef Basson

Michael Chemama

Emil Weisz

Wael Salalha

Moshe Eliasof

Shmuel Shmulik Nakash

Yonathan David

Itay Assulin

Adam Faust

Asaf Gutman

Kfir Luria

Ron Meiry

Manuel Radek

Zvi Nir

Oleg Kodinets

Lior Lavid

Disclosed herein is a system for non-destructive tomography of specimens. The system includes a scanning electron microscope (SEM) and a processor(s). The SEM is configured to obtain a sinogram of a tested specimen, parameterized by a vector {right arrow over (s)}, by projecting e-beams on the tested specimen, at each of a plurality of projection directions and offsets, and. for each e-beam, measuring a respective intensity of electrons returned from the tested specimen, The processor(s) is configured to obtain a tomographic map, pertaining to the tested specimen, by determining values indicative of components of a vector {right arrow over (t)} defined by an equation W{right arrow over (t)}={right arrow over (s)}. W is a matrix with components wspecifying a contribution of a j-th voxel in a nominal specimen to an i-th element of a nominal sinogram of the nominal specimen. The matrix W accounts for e-beam expansion and attenuation with depth within the nominal specimen.

Scanning electron microscopy-based tomography of specimens

There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.

Lateral recess measurement in a semiconductor specimen

A reactive particles supply system that may include an adjustable gas supply unit that is arranged to supply gas and to set a gas condition, a reactive particles supply unit that may be arranged to receive the gas, and an adjustable reactive particles output unit that may include a reactive particles input, a second reactive particles output, and a reactive particles path. The second reactive particles output is configured to output reactive particles towards an opening of a vacuumed chamber. The adjustable reactive particles output unit is arranged to mechanically configure at least one element of the reactive particles path according to the reactive particles condition.

Reactive particles supply system

A method, a non-transitory computer readable medium and a device. The method may include (a) introducing a voltage difference between an absolute value of a negative pole of the electrostatic chuck and an absolute value of a positive pole of the electrostatic chuck, the introducing occurs while the wafer is supported by the electrostatic chuck and is contacted by one or more conductive contact pins of the electrostatic chuck; (b) monitoring, by an electrostatic sensor that comprises a sensing element, a charge at a point of measurement located at a front side of the wafer, at different points of time that follow a start of the introducing of the voltage difference, to provide monitoring results; and (c) determining an electrical parameter of the contact between the wafer and the electrostatic chuck, based on the monitoring results.

Evaluating a contact between a wafer and an electrostatic chuck

The present invention relates to a sensor for electron detection emitted from an object to be used with a charged particle beam column being operated at a certain column and wafer voltage. The sensor is configured and operable to at least reduce interaction of negative ions with the active area of the sensor while minimizing electrons energy loss. The sensor is also configured and operable to minimize both gradual degradation of a cathodoluminescence efficiency of the active area and dynamic change of cathodoluminescence generated during operation of the sensor and evolving throughout the scintillator's lifetime.

Sensor for electron detection

A method, a non-transitory computer readable medium and a three-dimensional evaluation system for providing three dimensional information regarding structural elements of a specimen. The method can include illuminating the structural elements with electron beams of different incidence angles, where the electron beams pass through the structural elements and the structural elements are of nanometric dimensions; detecting forward scattered electrons that are scattered from the structural elements to provide detected forward scattered electrons; and generating the three dimensional information regarding structural elements based at least on the detected forward scattered electrons.

Generating three dimensional information regarding structural elements of a specimen

A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.

Charged particle beam source and a method for assembling a charged particle beam source

A cleanliness monitor, an evaluation system and a method. The cleanliness monitor may include: a first vacuum chamber, a second vacuum chamber, a molecule collector, a release unit, a mass spectrometer, a manipulator that may be configured to move the molecule collector from the first position to the second position, and an analyzer. The mass spectrometer may have a line of sight to an inner space of the second vacuum chamber. The mass spectrometer may be configured to monitor the inner space of the second vacuum chamber and to generate detection signals that are indicative of a content of the inner space of the second vacuum chamber. A first subset of the detection signals may be indicative of a presence of the at least subset of released organic molecules. The analyzer may be configured to determine, based on the detection signals, the cleanliness of at least one out of (a) the first vacuum chamber, and (b) a tested vacuum chamber. The tested vacuum chamber is fluidly coupled to the first vacuum chamber.

Cleanliness monitor and a method for monitoring a cleanliness of a vacuum chamber

A cleanliness monitor for monitoring a cleanliness of a vacuum chamber. The cleanliness monitor may include a mass spectrometer, a molecule aggregation and release unit and an analyzer. The molecule aggregation and release unit is configured to (a) aggregate, during an aggregation period, organic molecules that are present in the vacuum chamber and (b) induce, during a release period, a release of a subset of the organic molecules towards the mass spectrometer. The mass spectrometer is configured to monitor an environment within the vacuum chamber and to generate detection signals indicative of a content of the environment; wherein a first subset of the detection signals is indicative of a presence of the subset of the organic molecules. The analyzer is configured to determine the cleanliness of the vacuum chamber based on the detection signals.

A computer program product and a method for dissipation of an electrical charge stored in a region of an object. The method may include (a) sensing, by at least one sensor, an electrical charging status of the region of the object, while the object is located within a vacuum chamber and while a gaseous pressure within the vacuum chamber is below a certain vacuum pressure threshold; and (b) performing, based on the charging status of the given region, an electrical charge dissipation process that comprises increasing the gaseous pressure within the vacuum chamber to be within a given gaseous pressure range that facilitates a dissipation, by breakdown, of the electrical charge stored in the region of the object to the vacuum chamber.

System, computer program product, and method for dissipation of an electrical charge

A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A); an aperture device with a first number of apertures configured to create a first number of beamlets from the charged particle beam, wherein the first number is five or more, wherein the apertures are arranged on a ring line around the optical axis (A) such that perpendiculars of the apertures onto a tangent of the ring line are evenly spaced. The charged particle beam device further includes an electrostatic multipole device configured to individually influence the beamlets. Further, a charged particle beam influencing device and a method of operating a charged particle beam device are described.

Charged particle beam device, charged particle beam influencing device, and method of operating a charged particle beam device

An electrostatic chuck includes an isolating substrate that surrounds at least one electrode; multiple protrusions having upper portions arranged to contact a wafer; and at least one discharging element positioned between the at least one electrode and the upper portions of the multiple protrusions; which discharging element, once coupled to a discharging circuit, is arranged to discharge charge accumulated in the isolating substrate.

Electrostatic chuck and a method for supporting a wafer

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Kidron, Israel

Guy Eytan