Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux

Societe Pour L'etude Et La Fabrication Des Circuits Integres Speciaux

Guy Dubois

Andre Rochet

Simon Deleonibus

Alain Lalanne

Louis Faure

Installation and method for handling delicate objects in an atmosphere

In order to form aluminum interconnections through a thick insulating layer in an integrated circuit without any attendant danger of rupture at the level of the contact openings in the insulating layer between the interconnection layer and the substrate, the contact openings are first filled with polycrystalline silicon or a metal having high covering power and deposited by chemical decomposition in gas phase, whereupon the aluminum is deposited by vacuum evaporation.

Method of fabrication of aluminum contacts through a thick insulating

A process for manufacturing high-resistance elements for integrated circuits, in which the resistors are positioned on a layer of silica covering an integrated circuit, in a polycrystalline silicon zone possessing high resistivity, current supply lines being formed of a layer of polycrystalline silicon possessing low resistivity, surmounted by a layer of tantalum silicide. Plugs of photosensitive resin, deposited on a layer of polycrystalline silicon, are used to mark out a zone where the resistor is to be positioned, from zones in which resistivity is reduced by doping, and also to 'lift-off' the layer of tantalum silicide on top of the resistor position.

Manufacturing TaSi-polysilicon conductors having high-resistance

Growing community of inventors

St. Etienne de Crossey, France

Guy Dubois